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1、Vol457
2、5February2009
3、doi:10.1038/nature07719LETTERSLarge-scalepatterngrowthofgraphenefilmsforstretchabletransparentelectrodes1,3,4725562,3KeunSooKim,YueZhao,HoukJang,SangYoonLee,JongMinKim,KwangS.Kim,Jong-HyunAhn,3,751,3,4PhilipKim,Jae-YoungChoi&ByungHeeHongProble
4、msassociatedwithlarge-scalepatterngrowthofgrapheneIthasbeenknownforover40yearsthatCVDofhydrocarbonsonconstituteoneofthemainobstaclestousingthismaterialindevicereactivenickelortransition-metal-carbidesurfacescanproducethin119–21applications.Recently,macroscopic-sca
5、legraphenefilmsweregraphiticlayers.However,thelargeamountofcarbonsourcespreparedbytwo-dimensionalassemblyofgraphenesheetschem-absorbedonnickelfoilsusuallyformthickgraphitecrystalsrather2,3icallyderivedfromgraphitecrystalsandgrapheneoxides.thangraphenefilms(Fig.2a)
6、.Tosolvethisproblem,thinlayersofHowever,thesheetresistanceofthesefilmswasfoundtobemuchnickelofthicknesslessthan300nmweredepositedonSiO2/Sisub-largerthantheoreticallyexpectedvalues.Herewereportthedirectstratesusinganelectron-beamevaporator,andthesampleswerethensynt
7、hesisoflarge-scalegraphenefilmsusingchemicalvapourheatedto1,000uCinsideaquartztubeunderanargonatmosphere.depositiononthinnickellayers,andpresenttwodifferentmethodsAfterflowingreactiongasmixtures(CH4:H2:Ar550:65:200standardofpatterningthefilmsandtransferringthemtoa
8、rbitrarysub-cubiccentimetresperminute),werapidlycooledthesamplestoroom21strates.Thetransferredgraphenefilmsshowverylowsheetresis-temperature(,25uC)attherateof,10uCsusingflowingargon.tanceof280Vpersquare,with80percentopticaltransparency.Wefoundthatthisfastcoolingra
9、teiscriticalinsuppressingformationAtlowtemperatures,themonolayerstransferredtosilicondioxideofmultiplelayersandforseparatinggraphenelayersefficientlyfromsubstratesshowelectronmobilitygreaterthan3,700cm2V21s21thesubstrateinthelaterprocess20.4,5andexhibitthehalf-int
10、egerquantumHalleffect,implyingthatAscanningelectronmicroscope(SEM;JSM6490,Jeol)imageofthequalityofgraphenegrownbychemicalvapourdepositionisasgraphenefil
