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1、摘要I摘要在迅速发展的无线通信产业中,尤其是在硅基射频集成电路领域,高质量的无源器件的设计成为一个关键的问题。基于此,本文重点研究了超宽带下的片上电感的形状结构和几何尺寸的设计和优化方法。区别于传统片上电感的研究思路,本文并没有将片上电感仅仅当作一个孤立器件来研究,而是将其作为一个子电路并与其应用电路进行协同优化设计。本文首先从片上电感的物理机理以及电磁场理论出发,对片上电感的制作工艺、材料参数、损耗机制以及各种寄生效应进行了研究。接着研究了片上电感的分析模型、评估方法、程序计算以及电磁仿真软件。然后提出了一套行之有效的超宽带片上电感的优化
2、设计的流程来优化设计了片上电感。在此基础上,设计完成了超宽带正交信号发生器电路,实现了片上电感与其应用电路的协同优化,将重要指标相位误差降低到5度。最后,结合超宽带的特点以及目前的集成片上电感研究的热点,设计完成了一个1-8GHz下的有源电感,另外为在宽带下达到提高Q值的目的,设计完成一个1-20GHz下的半有源电感,将无源电感的Q值提高了4左右。关键字:片上电感射频集成电路超宽带万方数据万方数据AbstractIIIAbstractIntherapidlygrowingwirelesscommunicationsindustry,espe
3、ciallyinthefieldofsiliconRFICs,thedesignofahigh-qualitypassivedevicebecomeakeyissue.Undersuchbackground,thispaperfocusesonthedesignandoptimizationofon-chipinductors’shape,structureandgeometrysizeattheultra-wideband.Differentlyfromthetraditionalon-chipinductorsresearchthoug
4、ht,thispaperthispaperdoesnotmerelydealwithon-chipinductorsasanisolateddevice,butasasub-circuitwithitsapplicationcircuittomakeacollaborativeoptimizeddesign.Firstly,fromthephysicalmechanismofon-chipinductorsandelectromagnetictheory,theproductionprocess,thematerialparameters,
5、lossmechanismsandvariousparasiticeffectsofon-chipinductorswerestudied.Thenitintroducedtheon-chipinductors’analysismodel,assessmentmethods,theprogramcalculatesandelectromagneticsimulationsoftware.Thenthisarticleproposedasetofeffectiveon-chipinductordesignoptimizationprocess
6、tooptimizethedesignofon-chipinductorsunderultrawidebandfrequencyrange.Onthisbasis,thedesignofaquadraturesignalgeneratorcircuitwiththeinductoriscompletedtoachieveacooperativeoptimizationofon-chipinductorsanditsapplicationcircuit.Theresultsshowthatthephaseerror,themostimport
7、antspecifications,ofthequadraturesignalgeneratorcircuitisreducedto5degree.Atlast,combiningthecharacteristicsofultra-widebandandhotspotoftheintegratedon-chipinductorsonthecurrentstudy,thedesignofanactiveinductorwitha1-8GHzworkfrequencyrangeiscompleted.Inadditiontoachievethe
8、purposeofimprovetheQvalueunderbroadband,thedesignofasemi-activeinductorunder1-20GHzworkin