Research on the Electrification of Surface Protective Materials

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1、ProceedingsofThe6thlntemationalConferenceonPropertiesandApplicationsofDielectricMaterialsJune21-26.2000,Xi'anJiaotongUniversity,Xi'an,ChinaResearchontheElectrificationofSurfaceProtectiveMaterialsUsedinPowerElectronicDevicesDongXiaobingXuChuanxiangZhangShaoyunXi'anJiaotongUniversit

2、yXi'an.China710049Abstract:Des@ofsurfaceterminationstructureandcontrolofdielectricmaterialsunderthehighfieldandhighsurfaceelectricalfieldinPowerElectronicDevicesarethetemperature,whichcausethesurfacechargeseparation.Itisstickingpointsthatwecanimprovethewithstandingvoltageofthemain

3、factorthataffectsthechargeandelectricalfielddevicesandtheirperformance.Attertheterminaldesignofsilicondistributiononthesurfaceofpowersemiconductordevices.devicesbeingoptimized,itstillneedssomeappropriate#enwestudythelawofelectrificationofsurfacepassivationlayersandprotectionmateri

4、alstoprotectthesurfaceofprotectionmaterialsusedonpowerelectronicdevices,wesilicondevicesfromcontamination.Inthispapertheshouldconsidertheinterfacepropertybetweendielectricelectrificationruleandmechanismofsurfaceprotectionmaterialsmaterialsandsemiconductorintwodifferentways:contact

5、usedinsilicondeviceswereinvestigatedbyusingChargeelectrificationandelectretelectrification.SeparationMethodandLaserProbeDetectionMethod.Theinfluenceonthewithstandvoltageofdevicesandstabilityathigh11.EXPERIMENTALTECHNIQUEStemperaturehadalsobeendiscussed.Someusableresultsinpractical

6、applicationareputforward.A.ContactElectrificationWefocusontherelationshipbetweentheconstructionKeywords:electrification;powerelectronicdevice;protectionandcompositionofdielectricmaterialsusedonthesurfacematerialsofpowerelectronicdevicesandelectrificationontheinterfacebetweendielec

7、tricmaterialsandsemiconductor,I.INTRODUCTIONandtrytofindouttheintrinsiclaw.Therearetwomainmethodsused:(1)ChargeSeparatingMeasurement;(2)PowerElectronicDevicesaremainlyspecifiedhighLaserProbeDetectionMethod.Themethodsandresultswillvoltagepowerconvertorsmadeofsilicon,suchasDiodes,be

8、presentedasfollow.SCRs,GTOs,IGBT,