关于MOS布线时的天线效应(Antenna effect)的解说

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1、关于mos布线的天线效应的解说Theantennaeffect,moreformallyplasmainducedgateoxidedamage,isaneffectthatcanpotentiallycauseyieldandreliabilityproblemsduringthemanufactureofMOSintegratedcircuits.[1][2][3][4][5]Fabsnormallysupplyantennarules,whicharerulesthatmustbeobeyedtoavoidthisproblem.Aviolationofsuchrulesi

2、scalledanantennaviolation.Thewordantennaissomethingofamisnomerinthiscontext—theproblemisreallythecollectionofcharge,notthenormalmeaningofantenna,whichisadeviceforconvertingelectromagneticfieldsto/fromelectricalcurrents.Occasionallythephraseantennaeffectisusedinthiscontext,[6]butthisislesscomm

3、onsincetherearemanyeffects,[7]andthephrasedoesnotmakeclearwhichismeant.(e5P6t;L5Y)f04H#C8X;^&G1`4f/l:天线效应,更正式地说叫做电浆引起的栅氧损伤,在MOS结构的制造过程中可能会带来良率损失或可靠性问题。Fab通常会提供天线效应的设计规范,这条规范设计人员必须遵守。使用Antenna这个单词,从严格意义上说不是太准确,因为这里的天线是用来收集电荷,而不是用于电磁场转换的天线。Figure1(a)showsasideviewofatypicalnetinanintegratedcirc

4、uit.Eachnetwillincludeatleastonedriver,whichmustcontainasourceordraindiffusion(innewertechnologyimplantationisused),andatleastonereceiver,whichwillconsistofagateelectrodeoverathingatedielectric(seeFigure2foradetailedviewofaMOStransistor).Sincethegatedielectricissothin,onlyafewmoleculesthick,a

5、bigworryisbreakdownofthislayer.Thiscanhappenifthenetsomehowacquiresavoltagesomewhathigherthanthenormaloperatingvoltageofthechip.(Historically,thegatedielectrichasbeensilicondioxide,somostoftheliteraturereferstogateoxidedamageorgateoxidebreakdown.Asof2007,somemanufacturersarereplacingthisoxide

6、withvarioushigh-kdielectricmaterialswhichmayormaynotbeoxides,buttheeffectisstillthesame.)*`7t7K5i'r*i&M8w'}%O)t图1是一个典型的IC互连(天线网)的侧视图,每个天线网至少有一个驱动端(source或drain的扩散区/离子植入区),至少一个接收端(Gateoxide上的polysilicon电极)。由于Gate介质层很薄,容易发生超过介质层本身耐压能力的击穿。Oncethechipisfabricated,thiscannothappen,sinceeverynethas

7、atleastsomesource/drainimplantconnectedtoit.Thesource/drainimplantformsadiode,whichbreaksdownatalowervoltagethantheoxide(eitherforwarddiodeconduction,orreversebreakdown),anddoessonon-destructively.Thisprotectsthegateoxide.一旦MOS及互连结构形成后,一般就不会发

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《关于MOS布线时的天线效应(Antenna effect)的解说》由会员上传分享,免费在线阅读,更多相关内容在教育资源-天天文库

1、关于mos布线的天线效应的解说Theantennaeffect,moreformallyplasmainducedgateoxidedamage,isaneffectthatcanpotentiallycauseyieldandreliabilityproblemsduringthemanufactureofMOSintegratedcircuits.[1][2][3][4][5]Fabsnormallysupplyantennarules,whicharerulesthatmustbeobeyedtoavoidthisproblem.Aviolationofsuchrulesi

2、scalledanantennaviolation.Thewordantennaissomethingofamisnomerinthiscontext—theproblemisreallythecollectionofcharge,notthenormalmeaningofantenna,whichisadeviceforconvertingelectromagneticfieldsto/fromelectricalcurrents.Occasionallythephraseantennaeffectisusedinthiscontext,[6]butthisislesscomm

3、onsincetherearemanyeffects,[7]andthephrasedoesnotmakeclearwhichismeant.(e5P6t;L5Y)f04H#C8X;^&G1`4f/l:天线效应,更正式地说叫做电浆引起的栅氧损伤,在MOS结构的制造过程中可能会带来良率损失或可靠性问题。Fab通常会提供天线效应的设计规范,这条规范设计人员必须遵守。使用Antenna这个单词,从严格意义上说不是太准确,因为这里的天线是用来收集电荷,而不是用于电磁场转换的天线。Figure1(a)showsasideviewofatypicalnetinanintegratedcirc

4、uit.Eachnetwillincludeatleastonedriver,whichmustcontainasourceordraindiffusion(innewertechnologyimplantationisused),andatleastonereceiver,whichwillconsistofagateelectrodeoverathingatedielectric(seeFigure2foradetailedviewofaMOStransistor).Sincethegatedielectricissothin,onlyafewmoleculesthick,a

5、bigworryisbreakdownofthislayer.Thiscanhappenifthenetsomehowacquiresavoltagesomewhathigherthanthenormaloperatingvoltageofthechip.(Historically,thegatedielectrichasbeensilicondioxide,somostoftheliteraturereferstogateoxidedamageorgateoxidebreakdown.Asof2007,somemanufacturersarereplacingthisoxide

6、withvarioushigh-kdielectricmaterialswhichmayormaynotbeoxides,buttheeffectisstillthesame.)*`7t7K5i'r*i&M8w'}%O)t图1是一个典型的IC互连(天线网)的侧视图,每个天线网至少有一个驱动端(source或drain的扩散区/离子植入区),至少一个接收端(Gateoxide上的polysilicon电极)。由于Gate介质层很薄,容易发生超过介质层本身耐压能力的击穿。Oncethechipisfabricated,thiscannothappen,sinceeverynethas

7、atleastsomesource/drainimplantconnectedtoit.Thesource/drainimplantformsadiode,whichbreaksdownatalowervoltagethantheoxide(eitherforwarddiodeconduction,orreversebreakdown),anddoessonon-destructively.Thisprotectsthegateoxide.一旦MOS及互连结构形成后,一般就不会发

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