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1、Chapter2MaterialPropertiesandTransportPhysicsAtpresent,mostpowersemiconductordevicesaremanufacturedusingsiliconasthebasematerial.Bothunipolarandbipolardeviceshavebeensuccessfullydevelopedfromsilicontoserveaverybroadrangeofapplications.Asshowninthepreviouschapter,th
2、eresistanceofthedriftregioninpowerdevicescanbedrasticallyreducedbyreplacingsiliconwithwidebandgapsemiconductors.Althoughsomeeffortwasundertakeninthe1980stodeveloppowerdevicesfromgalliumarsenide,interestinthistechnologyhasdwindledbecauseitismuchmorepromisingtomaketh
3、epowerdevicesfromsiliconcarbide.Forthisreason,therelevantpropertiesofsiliconcarbideareincludedwiththoseofsiliconinthischapterforthepurposesofcomparisonanddesign.Analyticalexpressionsthatcanmodelthesepropertiesareprovidedtofacilitatetheanalysisofpowerdevicestructure
4、s.Althoughthefundamentalmaterialpropertiesofthesemiconductorgoverntheoperatingcharacteristicsofpowerdevices,processingtechniquesusedtocontrolthesepropertiesimposetechnologicalconstraintsthatareequallyimportantforobtainingthedesireddevicecharacteristics.Forthisreaso
5、n,thechapterincludesadiscussionofcurrenttechnology,suchaneutrontransmutationdoping(NTD)forcontrollingtheresistivityandelectronirradiationforcontrollingtheminoritycarrierlifetime.Thesetechnologieshavebeenspecificallydevelopedformanufacturingpowerdevicesandarealmoste
6、xclusivelyusedforthesetypesofstructures.2.1FundamentalProperties12–4Thefundamentalpropertiesofsiliconandsiliconcarbidearesummarizedandcomparedinthissection.Onlythepropertiesforthe4Hpoly-typeofsiliconcarbidehavebeenincludedherebecauseitspropertiesaresuperiortothoseo
7、ftheB.J.Baliga,FundamentalsofPowerSemiconductorDevices,doi:10.1007/978-0-387-47314-7_2,©SpringerScience+BusinessMedia,LLC200824FUNDAMENTALSOFPOWERSEMICONDUCTORDEVICESotherpoly-typesofsiliconcarbide.Thebasicpropertiesofrelevancetopowerdevicesaretheenergybandgap,thei
8、mpactionizationcoefficients,thedielectricconstant,thethermalconductivity,theelectronaffinity,andthecarriermobility.Sincetheintrinsiccarrierconcen
