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1、元器件交易网www.cecb2b.comK4M51323LE-M(E)C/L/FMobile-SDRAM4Mx32Bitx4BanksMobileSDRAMin90FBGAFEATURESGENERALDESCRIPTION•2.5Vpowersupply.TheK4M51323LEis536,870,912bitssynchronoushighdata•LVCMOScompatiblewithmultiplexedaddress.rateDynamicRAMorganizedas4x4,196,304wordsby32bits,•Fourbanksoperation.fabric
2、atedwithSAMSUNG’shighperformanceCMOStechnol-•MRScyclewithaddresskeyprograms.ogy.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockandI/Otransactionsarepossibleonevery-.CASlatency(1,2&3).clockcycle.Rangeofoperatingfrequencies,programmable-.Burstlength(1,2,4,8&Fullpage).burstlengt
3、hsandprogrammablelatenciesallowthesame-.Bursttype(Sequential&Interleave).devicetobeusefulforavarietyofhighbandwidthandhighper-•EMRScyclewithaddresskeyprograms.formancememorysystemapplications.•Allinputsaresampledatthepositivegoingedgeofthesystemclock.•Burstreadsingle-bitwriteoperation.•Special
4、FunctionSupport.-.PASR(PartialArraySelfRefresh).-.InternalTCSR(TemperatureCompensatedSelfRefresh)•DQMformasking.•Autorefresh.•64msrefreshperiod(8Kcycle).•CommercialTemperatureOperation(-25°C~70°C).•2ChipsDDP90BallsFBGAwith0.8mmballpitch(-MXXX:Leaded,-EXXX:LeadFree).ORDERINGINFORMATIONPartNo.Ma
5、xFreq.InterfacePackageK4M51323LE-M(E)C/L/F80125MHz(CL=3)90FBGAK4M51323LE-M(E)C/L/F1H105MHz(CL=2)LVCMOSLeaded(LeadFree)K4M51323LE-M(E)C/L/F1L105MHz(CL=3)*1-M(E)C/L/F:Normal/Low/LowPower,CommercialTemperature(-25°C~70°C)NOTES:1.Incaseof40MHzFrequency,CL1canbesupported.2.Samsungshallnotofferforsa
6、leorselleitherdirectlyorthroughandthird-partyproxy,andDRAMmemoryproductsthatinclude"Multi-DiePlasticDRAM"foruseascomponentsingeneralandscientificcomputerssuchas,bywayofexample,mainframes,servers,workstationsordesktopcomputersforthefirstthreeyearsoffiveyeartermofthislicense.Nothinghereinlimitst
7、herightsofSamsungtouseMulti-DiePlasticDRAMinotherproductsorotherapplicationsunderparagranghsuchasmobile,telecomornon-computerapplication(whichincludebywayofexamplelaptopornotebookcomputers,cellphones,televisionsorvisualmonitors)Violatio
