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1、元器件交易网www.cecb2b.comIPD30N06S3-24®OptiMOS-TPower-TransistorProductSummaryVDS55VRDS(on),max24mWID30AFeatures•N-channel-NormalLevel-Enhancementmode•AutomotiveAECQ101qualifiedPG-TO252-3-11•MSL1upto260°Cpeakreflow•175°Coperatingtemperature•Greenpackage(RoHScompliant)•100%AvalanchetestedTypePackageMark
2、ingIPD30N06S3-24PG-TO252-3-113N0624Maximumratings,atTj=25°C,unlessotherwisespecifiedParameterSymbolConditionsValueUnitContinuousdraincurrent1)IDTC=25°C,VGS=10V30ATC=100°C,2)23VGS=10VPulseddraincurrent2)ID,pulseTC=25°C120Avalancheenergy,singlepulse2)EASID=15A100mJAvalanchecurrent,singlepulseIAS30AG
3、atesourcevoltage3)VGS±20VPowerdissipationPtotTC=25°C45WOperatingandstoragetemperatureTj,Tstg-55...+175°CIECclimaticcategory;DINIEC68-155/175/56Rev.1.1page12007-11-07元器件交易网www.cecb2b.comIPD30N06S3-24ParameterSymbolConditionsValuesUnitmin.typ.max.2)ThermalcharacteristicsThermalresistance,junction-ca
4、seRthJC--3.3K/WSMDversion,deviceonPCBRthJAminimalfootprint--6224)--406cmcoolingareaElectricalcharacteristics,atTj=25°C,unlessotherwisespecifiedStaticcharacteristicsDrain-sourcebreakdownvoltageV(BR)DSSVGS=0V,ID=1mA55--VGatethresholdvoltageVGS(th)VDS=VGS,ID=20µA2.13.04.0VDS=55V,VGS=0V,Zerogatevoltag
5、edraincurrentIDSS-0.011µATj=25°CVDS=55V,VGS=0V,2)-1100Tj=125°CGate-sourceleakagecurrentIGSSVGS=20V,VDS=0V-1100nADrain-sourceon-stateresistanceRDS(on)VGS=10V,ID=17A-2124mΩRev.1.1page22007-11-07元器件交易网www.cecb2b.comIPD30N06S3-24ParameterSymbolConditionsValuesUnitmin.typ.max.2)DynamiccharacteristicsIn
6、putcapacitanceCiss-18602140pFVGS=0V,VDS=25V,OutputcapacitanceCoss-280420f=1MHzReversetransfercapacitanceCrss-270400Turn-ondelaytimetd(on)-14-nsRisetimetrVDD=27.5V,-26-VGS=10V,ID=30A,Turn-offdelaytimetd(off)RG=14.8W-13-Falltimetf-26-2)GateChargeCharacteristicsGatetosourcechargeQgs-1520nCGatetodrain
7、chargeQgdVDD=11V,ID=30A,-69VGS=0to10VGatechargetotalQg-2731GateplateauvoltageVplateau-7.4-V2)ReverseDiodeDiodecontinousforwardcurrentIS--30ATC=25°CDiodepulsecurrentIS,pulse--120VGS=0V,IF=30A,DiodeforwardvoltageVS
