MgO薄膜忆阻器的制备及其阻变与瞬态特性研究

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1、分类号TB34学号14010046ＵＤＣ620密级公开工学硕士学位论文MgO薄膜忆阻器的制备及其阻变与瞬态特性研究硕士生姓名殷一民学科专业材料科学与工程研究方向纳米材料指导教师程海峰研究员国防科学技术大学研究生院二〇一六年十一月ResistanceSwitchingandTransientPerformanceofMemristorsPreparedfromMgOThinFilmsCandidate：YinYiminAdvisor：ChengHaifengAdissertationSubmittedinpartialfulfillmentoftherequir

2、ementsforthedegreeofMasterofEngineeringinMaterialsScienceandEngineeringGraduateSchoolofNationalUniversityofDefenseTechnologyChangsha，Hunan，P.R.ChinaNovember，2016国防科学技术大学研究生院硕士学位论文目录摘要....................................................................................................

3、.............iABSTRACT.........................................................................................................ii第一章绪论.................................................................................................11.1忆阻器及忆阻材料........................................

4、....................................................11.1.1忆阻器概述.............................................................................................11.1.2忆阻材料研究现状.................................................................................21.2瞬态电子器件......................

5、..............................................................................91.2.1瞬态电子器件概述.................................................................................91.2.2瞬态电子器件研究现状.......................................................................101.3MgO薄膜.............

6、............................................................................................111.3.1MgO薄膜的结构与特性......................................................................111.3.2MgO薄膜的制备方法..........................................................................121.3.3MgO薄膜

7、的应用..................................................................................121.4选题依据与研究内容.....................................................................................131.4.1选题依据........................................................................................

8、......131.4.2研究内容..