资源描述：
《用于光网络通信的si基光子集成器件的研究》由会员上传分享，免费在线阅读，更多相关内容在行业资料-天天文库。
1、南京大学学报(自然科学)第41卷第1期Vol.41,No.1JOURNALOFNANJINGUNIVERSITY2005年1月Jan.,2005(NATURALSCIENCES)硅基纳米光电子专栏X用于光网络通信的Si基光子集成器件的研究XX王启明(中国科学院半导体研究所,集成光电子学国家重点联合实验室,北京,100083)摘要:报导了可用于光网络系统终端OADM和OXC的Si基长波长量子阱窄带响应光电接收器,MOEMS和F-PTO宽频域光学滤波器,M-Z型TO光开关和MMI多路分束器以及可变光强衰减器.用应变层SiGe/SiMQW
2、研制的RCE光电接收器响应谱半宽FWHM<6nm,外量子效率η>4.2%;采用表面微机械加工的桥式光学滤波器,当外加电压0→50V,连续可调谐范围达90nm;采用全平面工艺研制的F-P腔TO滤波器,当外加电流0→57mA时,连续可调谐范围达23nm,FWHM<0.5nm.在SOISi基片上研制的M-ZTO波导光开关,开关时间<30μs,功耗～100mW.开关消光比-13dB和-10dB,1×4MMI多路分束器输出光场的不均衡性<0.36dB,总插入损耗6.9dB.用背向对接的MMI构成的M-Z干涉仪实现了光强的可变调最大衰减量26d
3、B,响应时间100μs,插入损耗4.8～7dB.关键词:Si基集成,光电探测器,光学滤波器,光开关,光分路器,光强衰减器中图分类号:TN25,TN36,TN29InvestigationonSi-basedIntegratedPhotonicDevicesforApplicationinOpticalNetworkCommunicationsWangQi-Ming(StateKeyLaboratoryonIntegratedOptoelectronics,InstituteofSemiconductors,CAS,Beijing,1
4、00083,China)Abstract:SeveralSi-basedintegratedphotonicdevices,whichareindispensabletooptical-add-drop-multiplexer(OADM)andoptical-cross-connect(OXC)network,arereported,includinglongwavelengthSi-basedmultiplequantumwell(MQW)photodetectorwithnarrowbandwidthresponse,widel
5、ytunablemicro-opto-electro-mechanical-systems(MOEMS)andFabry-Perot(F-P)thermo-optical(TO)opticalfilter,Mach-Zehnder(M-Z)TOopticalswitch,multimodeinterference(MMI)splitter,andvariableopticalattenuator(VOA).StrainedSiGe/SiMQWresonant-cavity-enhanced(RCE)photodetectorhasa
6、full-width-at-half-maximum(FWHM)ofthepeakbelow6nm,withexternalquantumefficiencyupto4.2%.MOEMStunablefilterwithfourmicro-beams,byusingsurfacemicromachiningtechnology,hasacontinuoustuningrangeof90nmunderbiasof50V.F-PTOtunablefilterbyusingplanartechnologyhasacontinuoustun
7、ingrangeof23nmunder57mA,anditsFWHMissmallerthan0.5nm.M-ZTOwaveguideopticalswitchfabricatedonSilicon-on-Insulator(SOI)substrate,exhibitstheresponsespeedlessthan30μs,powerconsumptionofabout100mW,theonandoffextinctionratiosof-13dBand-10dB,respectively.The1×4MMIsplittersho
8、wsauniformityof0.36dB,andatotalinsertionlossof6.9dB.TheM-ZX基金项目:国家重大基础研究规划(973)项目(G2000036603、G2000036606),国家高技术发展计划(
