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ID:36620330
大小:2.47 MB
页数:93页
时间:2019-05-13
《基于标准CMOS工艺的ISFET生物微传感SOC的信号读取电路研究》由会员上传分享,免费在线阅读,更多相关内容在学术论文-天天文库。
1、密级编号中国科学院研究生院博士学位论文\987864基王拯准£丛Q&王苎数兰&星量!生物邀佳盛SQg申请学位级别擅±学科专业名称物堡电王堂论文提交日期2QQ鱼生垒旦论文答辩日期2QQ鱼生量旦AbstractBiosensorSOCcanbewidelyusedintheareassuchaslifescience.biomedicalengineering,foodindustry,healthcare,environmentmonitoring,andSOon,Becauseofitsimportance.thetopicisattractingtremendousresearche
2、fforttoday。However,therealizationofthebiosensorSOCstillfaceswithmanychallenges.ThisdissertationpresentsathoroughstudyonamonolithicintegrationofISFETsensorsandreadoutelectronics,aimingatobtainingpropersignalconditionforfllrtherA/Dconversion.Inthisdissertation,theoperationprincipleoftheISFEThasbee
3、nstudiedandthe“floatinggate”structurefortheISFETisdescribed.TheTa205passivationlayerdepositedonthegateactsasthepH—sensitivematerial.Together,aSPICEmodeloftheISFETiSbuiltforcircuitsimulation.EmphasisofthisdissertationisplacedontheresearchintothesensorreadoutsystemcontainingISFET/REFET(referenceFE
4、T)pairandthebufferamplifiersaswellasareferenceelectrodestructurebasedonCMOStechnology.Whenthereadoutsystemisinoperation,twoamplifiersareemployedtoeachdetectISFETandREFETsignals.Thedifferenceofthetwosignalswillbeprocessedthxoughavoltagetocurrentconverterthatisimplementedwithanovelcircuitstructure
5、.ThisconvertercircuitissuitableforimpedancematchingbetweenthecascadingstagesoftheCMOSreadoutsystemandcandeliverlargedynamicrange.Therefore,theprocessedsignalshouldbeeasilytakenbytheA/Dconvener.UsuallytheinputoffsetvoltageofapracticaloperationalamplifierisveryIarge(typicallyintheorderofmagnitudeo
6、f1-10mV).Thisdissertationpresentsanauto.zerostabilizationtechniquethatisforthefirsttimeusedtodevelopthehi曲precisionop·ampforISFET’Ssignaldetection.ThistechniqueCansignificantlyreducetheoffset,temperaturedriftandlowfrequencynoiseoftheop—amp.Theop,ampsupplysconstantbiasconditionsfortheISFETsensorw
7、hichCallworkineitherlinearorsaturationregionbyprogrammablecontr01.TheamplifiermaintainsaDCopenloopgainofmorethan140dBandanoffsetvoltageoflessthan10uV.AbstraclThesensorchipisfabricatedinastandardO.35pmCMOSprocess(CharteredSem
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