GaN基双异质结特性研究

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1、西安电子科技大学硕士学位论文GaN基双异质结特性研究姓名：郑鹏天申请学位级别：硕士专业：微电子学与固体电子学指导教师：张进成20090101Abstract3Owingtotheirhi曲powerhandlingcapabilityathi曲frequencies，widebandgapA1GaN／GaNhi曲electronmobilitytransistors(HEMTs)areemerging缎promisingcandidatesfornext-generationRFandmicrowavepoweramplifiers．Withtremend

2、ousprogressesmadeduringthelastdecadeinmaterialqualityanddeviceprocessing,A1GaN／GaNHEMTshavebeenimprovedsignificantlyinbotlldeandRFperformances．Meanwhile，moreadvanceddevicestructuresarcbeingexploredforfurtherperformanceimprovement．111eGaN-baseddouble—heterojunctionHEMTs，forexample，

3、areoneofthesestructures，whichhavebeencarriedoutsuccessfully．ComparaedtotheconventionalGaN—basedheterojunction,theimprovedcarrierconfinementinGaN-baseddouble—heterojunctionHEMTsmaynotonlyresultinimprovedcarriermobilityandHEMTs’pinch-offbehavior,butalsohelptorestraintheCurrentcollap

4、seeffect．Sothereisgreatmeaningtoinvestigatethedouble-heterojunctionHEMTs．Inthispaper，firstly,thetheoryresearchwascarriedoutbytheone-dimensionalself-consistentsimulationofthebanddiagramandcarrierdistributionoftheGaN-baSeddoubleheterostructures．TheeffectofdifferentA1GaNback—barrierl

5、ayeronthecarrierdistributionandconf'mementWaSmainlystudiedinoursimulation．Secondly，theA1GaN／GaNdoubleheterostructurematerialswi也differentback-barrierlayersweredesignedandgrownbyMOCVDmethodonc-planesapphiresubstrate．Thesematerialsshowgoodcrystalqualityandhighelectricalcharacteristi

6、cs．ThehigherinterfacemismatcharosedfromthehighA1-contentinthebackbarrierlayer,aswellaSthereleaSeofcrystallatticebroughtbythelargerthicknessofthebackbarrierlayer,havebadeffectonthecrystalquality．Moreover,themercuryprobeCVmeaSurementWaScarriedouttostudytheeffectoftheA1contentandthic

7、knessoftheA1GaNback-barrierlayeronthecarrierdistributionandthecarrierconfinement．TheconclusionswemadefromthemercuryprobeCVmeaSurementarethesame谢t11theresultsoftlleoreticalsimulation，SOtheresultsoftheoreticalsimulationwereverified．Finally，theA硒懋fG懋double-heterojunctionHEMTswerefabr

8、icatedandresearchedtoanalysetheDC