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ID:36372205
大小:3.38 MB
页数:68页
时间:2019-05-10
《过渡族元素掺杂ZNO稀磁半导体薄膜的生长及其性能研究》由会员上传分享,免费在线阅读,更多相关内容在学术论文-天天文库。
1、浙江大学材料系硕士学位论文过渡族元素掺杂ZnO稀磁半导体薄膜的生长及其性能研究姓名:王雪涛申请学位级别:硕士专业:材料物理与化学指导教师:朱丽萍20100301浙江大学硕十学位论文AbstractDilutedmagneticsemiconductor(DMS)hasattractedgreatattentionduetoitspotentialapplicationsinspintronics.Dilutedmagneticsemiconductors(DMSs)areformedbypartialsubstitution
2、ofthecationsofthehostsemiconductorswithsmallamountofmagnetictransition—metal(TM)ionssuchasV,Cr,Mn,Fe,Co,andNi.Withchargeandspindegreesoffreedominasinglesubstance,DMSshaveattractedagreatdealofattentioninrecentyearsasenablingmaterialsintheemergingfieldof“spintronics”
3、,suchasmanufacturehigh-densityinformationmemory,logicdevicesandthespin-polarizedlighttransmitterofultra—lowenergyconsumption,whichareoptical,electricalandmagneticintegratednewdevices.Amongallthesesoxides,ZnObelongstothelistofthemostsuitablebuildingblockmaterialsfor
4、spintronicsapplicationduetoitsabundanceandenvironmentfriendlynatureandalsoduetoitspotentialasasuitableoptoelectronicmaterialwithawidebandgap(3.37eV)andahighexcitonbindingenergy(60meV).ZnOhasSOmanyadvantages,andWasappliedwidelyandeffectively.Buttherearemanyarguments
5、fortheoriginofthemagnetization.Themaintaskistoclearlytherelationshipbetweenthecarriersandthemagnetization.Inthisthesis,basedontheintroductionofpastandcurrentresearchonZnO—baseddilutedmagneticsemiconductormaterialsanddevices,transitionmetalionsdopedZnOthinfilmsarepr
6、eparedbyPLDontheSi(100),quartzandglasssubstrates.Themainresearchworkareasfollows:ThepreparationandcharacterizationofNidopedZnOthinfilms.TheNidopedZnOthinfilmsWaspreparedbyPLD.Bychanging02pressuresandthecontentofNiinthefilms,wesoughtforpropergrowthconditionsforNidop
7、edZnOthinfilmsandstudiedtheaffectstothemagneticproperties.Optimalconditionsareasfollows:thesubstratetempretureis500。C,the02pressureis0.02Pa,andtheconcentrationofNiisabout3at.%.WhentheNiconcentrationisabove5at.%.theexistenceofNiOphaseinthefilmsinduceselectricpropert
8、iesdeterioratedandthevisiblelighttransmittance(400—800nm)decreasedsharplyresultingfromthebindingenergyrelaxation.NtypeZn(Ni,Ga)OthinfilmsandPtype
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