[Nano letters]Direct Imaging of Rotational Stacking.pdf

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1、NANOLETTERSDirectImagingofRotationalStacking2009Vol.9,No.1FaultsinFewLayerGraphene102-106JamieH.Warner,*,MarkH.Ru¨mmeli,ThomasGemming,BerndBu¨chner,andG.AndrewD.BriggsDepartmentofMaterials,QuantumInformationProcessingInterdisciplinaryResearchCollaboration,UniVe

2、rsityofOxford,ParksRoad,Oxford,OX13PH,UnitedKingdom,andIFWDresden,P.O.Box270116,D-01171Dresden,GermanyReceivedAugust26,2008;RevisedManuscriptReceivedNovember6,2008ABSTRACTFewlayergraphenenanostructuresaredirectlyimagedusingaberrationcorrectedhigh-resolutiontran

3、smissionelectronmicroscopywithanelectronacceleratingvoltageof80kV.WeobserverotationalstackingfaultsintheHRTEMimagesof2-6layersofgraphenesheets,givingrisetoMoire´patterns.ByfilteringinthefrequencydomainusingaFouriertransform,wereconstructthegraphenelatticeofeachs

4、heetanddeterminethepackingstructureandrelativeorientationsofuptosixseparatesets.DirectevidenceisobtainedforfewlayergraphenesheetswithpackingthatisdifferenttothestandardABBernalpackingofbulkgraphite.Thishasimplicationstowardbilayerandfewlayergrapheneelectronicde

5、vicesandthedeterminationoftheirintrinsicstructure.Theinterestingraphenehasdevelopedrapidlysincethefirstof1-10°thatresultinMoire´patternswithstructuregreaterreportofitsexcellentelectronictransportpropertieswiththanananometer.11electricfieldeffects1anda2Dgasofmassl

6、essDiracThesp2bondingofcarboningraphenehasalowknock-Fermions.2Studiesontheelectronictransportstudiesofonthresholdforatomicdisplacementbyhighenergybilayergraphenehaveshownsuppressionofthe1/fnoiseelectronsandthislimitstheacceleratingvoltagethatcanbecomparedtomono

7、layergrapheneassociatedwiththedif-usedinhighresolutionelectronmicroscopywithoutinducingferentbandstructure.3Theintroductionofrotationalstacking12significantdamage.Priortothedevelopmentoflow-voltagefaultsinABBernalstackedgraphenebilayerschangestheaberrationcorrec

8、tion,theresolutionofHRTEMatelectrondispersionrelationshipclosetotheK-pointfromparabolicacceleratingvoltagesbetween80-120kVwaspoorin(AB)tolinearbandbehavior(rotationstackingf