Manufacturing Processes for Engineering Materials，PPT，Ch13.pdf

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1、WafersandChipsFIGURE13.1(a)A300-mm(11.8in.)waferwithalargenumberofdiesfabricatedontoitssurface.(b)DetailviewofanIntel45-nmchipincludinga153MbitSRAM(staticrandomaccessmemory)andlogictestcircuits.(c)ImageoftheIntel®Itanium®2processor;(d)Pentium®processormotherboard.Source:CourtesyofIntelCorpor

2、ation.(a)(b)(c)(d)ManufacturingProcessesforEngineeringMaterials,5thed.Kalpakjian•Schmid©2008,PearsonEducationISBNNo.0-13-227271-7BasicFabricationApproachBoronp+Polysiliconp+SiO2Cross-sectionimplantSiliconnitrideSiO2SiO2p-typesiliconpp(a)(b)(c)CVDSourceAlGateDrainPhosphorusorarsenicSiO2SiO2Si

3、O2SiO2SiO2SiO2SiO2pppn+n+p+n+n+p+n+n+p+(d)(e)(f)FIGURE13.2Cross-sectionalviewsofthefabricationofametaloxidesemiconductor(MOS)transistor.Source:AfterR.C.Jaeger.ManufacturingProcessesforEngineeringMaterials,5thed.Kalpakjian•Schmid©2008,PearsonEducationISBNNo.0-13-227271-7(a)Single-crystalgrowi

4、ngICFabricationInternaldiametersawSiliconSequence(b)WaferpreparationwaferSiliconingot1PreparedSilicon-PhotoresistsiliconwaferdioxidelayerSiliconProjectednitridelayerlightSiliconsubstrateReticle(ormask)Similarcycleisrepeated(c)Lithography/6tolaydownmetallinks2LensDoping/Etchingcyclebetweentra

5、nsistorsPatternsareprojectedMetalNewphotoresistisspunrepeatedlyontowaferconnectoronwafer,andsteps2to4arerepeated53AllphotoresistisremovedDoped4ExposedregionphotoresistisremovedAreasunprotectedbyphotoresistareetchedbygasesordopedwithions(d)BondingFIGURE13.3Generalfabricationsequencesforintegr

6、atedcircuits.(e)PackagingManufacturingProcessesforEngineeringMaterials,5thed.Kalpakjian•Schmid©2008,PearsonEducationISBNNo.0-13-227271-7(f)TestingCleanRooms100,000(3500)10,000(350)Clas1000Cs13equalto(35)la00Css,0la100100s0,0(Cs1035(3.5)la000s0(0s103)(5C030fparticles/ftstatedparticlesize10Cla

7、0(5))lass3(.35)s1.5s10)((010.0.335)5)otalnumberoorlargerthan0.1T0.010.050.10.51.0510100Particlediameter(µm)FIGURE13.4Allowableparticlesizeconcentrationsfordifferentclean-roomclasses.ManufacturingProcessesforEngineeringMaterials,5thed.Kalpakjian•Sch