A general method for the calculation of segregation profiles in floating zone grown silicon ingots with non-uniform initial distribution of the solute .pdf

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1、ARTICLEINPRESSJournalofCrystalGrowth304(2007)317–323www.elsevier.com/locate/jcrysgroAgeneralmethodforthecalculationofsegregationprofilesinfloatingzonegrownsiliconingotswithnon-uniforminitialdistributionofthesoluteHans-ChristofFreiheit,KurtBonauer-Klepp,RobertBaumannWackerChemi

2、eAG,Johannes-Hess-Str.24,84489Burghausen,GermanyReceived17August2006;receivedinrevisedform3January2007;accepted29March2007CommunicatedbyJ.J.DerbyAvailableonline3April2007AbstractInpolycrystallinesiliconanalyticssegregationeffectsrelatedtoradialnon-uniformdopantdistributionsar

3、eofmajorimportancefortheinterpretationofresistivitydata.Thedeterminationofdopantconcentrationsandresistivityprofilesinpolycrystallinesiliconinevitablyrequiresthetransformationintoasinglecrystal.Neglectingsegregationeffectsmaythereforesubstantiallybiastheactualmaterialpropertie

4、s.Atoolforthecomputationoffinalconcentrationprofilesinfloatingzonegrowningotswithnon-uniforminitialdistributionshasbeendeveloped,whichallowsthere-calculationofpolysilicondatafromsinglecrystaldata.r2007ElsevierB.V.Allrightsreserved.PACS:81.10.h;68.3.DvKeywords:A1.Doping;A1.Segre

5、gation;A2.Floatingzonetechnique;B2.Semiconductingsilicon1.Introductioncrystallinesilicon,orinshortpolysilicon,isthefeedmaterialforthegrowthofsiliconingotsorribbonsforThetheoryofzonemeltinghasbeendevelopedbyPfannelectronicandphotovoltaicapplications[3].Thepurityof[1]intheearly

6、1950swhenthedevelopingsemiconductorpolysiliconistypicallyfoundintherangeof10billionindustrywasfacedwithanincreasingdemandformaterialssiliconatomsperforeignatom.Here,thedopants(groupwithhighpurityandcrystallineperfection.FirstappliedtoIIIandVelements,e.g.B,PandAs)areofparticul

7、arpurifygermaniumfortransistors,todayzonemeltingistheinterestastheydefinetheelectronicpropertiesofthegrowthtechniqueofchoiceforsiliconcrystalusedinmaterial.Adetaileddescriptionofthepolysiliconmanu-discreteandpowerdevices.facturingprocessandrelatedmaterialpropertiesisgivenSince

8、thentremendousimprovementsweremadeandabyZulehner[3].Duetothehighdefe