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1、APPLIEDPHYSICSLETTERS95,2225012009EffectsofRudiffusioninexchange-biasedMgOmagnetictunneljunctionspreparedbyinsituannealing1,21,a21Il-JaeShin,Byoung-ChulMin,JinPyoHong,andKyung-HoShin1CenterforSpintronicsResearch,KoreaInstituteofScienceandTechnology,Seoul136-791,RepublicofKorea2De
2、partmentofPhysics,NovelFunctionalMaterialsandDevicesLab,HanyangUniversity,Seoul133-791,RepublicofKoreaReceived30September2009;accepted4November2009;publishedonline1December2009WestudytheeffectofRudiffusioninexchange-biasedMgOmagnetictunneljunctionspreparedbyhigh-temperatureinsitua
3、nnealingabove400°C,circumventingMndiffusionconventionallycausedbypostannealingprocess.ThehightemperatureinsituannealingleadstoRudiffusionattheCoFeB/Ruinterfaces,andtherebyresultsinareductionintunnelmagnetoresistanceTMR.TheminimizationofRudiffusionduringtheinsituannealingprovidesal
4、argeTMRof294%atroomtemperaturewithanexchange-biasfieldof280Oe.Inaddition,thetemperatureandvoltagedependenceofTMRrevealsthatthereisneithersignificantspin-exchangescatteringnorsevereimpurity-assistedscatteringintheMgObarrier.©2009AmericanInstituteofPhysics.doi:10.1063/1.3268791Theachi
5、evementoflargemagnetoresistanceinMgO-andMgObarrier.Becausethehigh-temperatureannealingbasedmagnetictunneljunctionsMTJs,consistingoftwowithCoFeB/MgO/CoFeBisconductedbeforetheIrMnlayerferromagneticelectrodesseparatedbyathinMgOtunnelisdeposited,thediffusionofMncanbeavoidedinprinciple
6、.barrier,providesanopportunitytorealizehigh-densitymag-TheSAFpinnedlayerisformedafterwardsbythedepositionneticrandomaccessmemories,microwaveoscillators,andofremaininglayersatroomtemperatureandbypostdeposi-1,2semiconductor-basedspindevices.Itisknownthatthean-tionannealingatarelativel
7、ylowtemperaturetopreventanynealingofMgOMTJsathightemperatureyieldsanim-furtherdetrimentaldiffusion.Themainadvantageofthisap-provedgrain-to-grainepitaxybetweentheferromagneticproachisthattheprocessforachievingahighTMRissepa-electrodesandMgOtunnelbarrier,andtherebypresentsaratedfromth
8、eprocessforobtainin
