半导体物理与器件(尼曼版)第15章(免费下载)

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1、课后答案网，用心为你服务！大学答案---中学答案---考研答案---考试答案最全最多的课后习题参考答案，尽在课后答案网（www.khdaw.com）！Khdaw团队一直秉承用心为大家服务的宗旨，以关注学生的学习生活为出发点，旨在为广大学生朋友的自主学习提供一个分享和交流的平台。爱校园（www.aixiaoyuan.com）课后答案网（www.khdaw.com）淘答案（www.taodaan.com）rdSemiconductorPhysicsandDevices:BasicPrinciples,3editionChapter15SolutionsManualProble

2、mSolutionsChapter15ProblemSolutions15.4(a)15.1ThelimitoflowinjectionmeansthatWehaveββeff=+ABβββA+B()()()1615−3ThennN00==..101bg101=0cmBB180=+25ββ25+NowBBAeDn()0orBBIC=155=26βBxBwhichyields()−19()15051610..bxg2010bgβ=596.B=−4(b)310xorWehaveIAC=533.βBEAii=CBor15.2F1+βAIβii=Fromthejunctionbr

3、eakdowncurve,forBHGKJCACBβABV=1000V,weneedthecollectordopingCBOso14−3concentrationtobeNxcC≈210mF125+I()596.i=20HKCA25Depletionwidthintothebase(neglectV)whichyieldsbi12/iA=323.L21∈VFNIFIOCABCCx=pHGKJHGKJNMeNNNBCB+QP15.5L()−14()211788510..bgx1000Sketch=M−19N1610.x15.612/14WewantF210xIF1IO×H

4、G15KJH1514K1VCC1F24I510xxx510+210QPPIT=⋅Crated,,⇒ICratedHK=202222orwhichyieldsxm=316.µ(Minimumbasewidth)pIA=333.Crated,DepletionwidthintothecollectorThenL()−14()211788510..bgx1000V24x=MCCn−19R==N1610.xLI333.Crated,12/15orF510xIF1IO×141514R=7.2ΩHG210xxxKJH510+210KQPLorxm=789.µ(Minimumcolle

5、ctorwidth)15.7nIfVV=25,thenCCV2515.3()CCImax===025.AI

6、hichyieldsIA=0125.IA=1839.C1SoIA=1655.2P()()()max=−012525.0125100.()IA=1505.or3PW()max=<156.PNow,PI=V,soTSo,maximumVisVV=25PW1=609.CCCCPW=548.215.8PW=4.983VDS(b)NowR=onINowDPowerdissipatedintransistorF111IVV++==51().2882HKV18..362.2DSPIV==DDSorRonVV=388.WehaveThen200−VDSIA==2.16,.PW838I=1

7、1D100IA==108.,PW4.19sowecanwrite222IA==177.,.PW685F200−VDSIVDS33P=⋅=VHKDS100Ron15.10ForTC==25,R2Ω,onForBV=200V,fromthejunctionbreakdownThencurve,weneedthedraindopingconcentrationto2F200−VDSIVDS15−3⋅=VbeNxcD≈1510.mHKDS1002Forthechannellength(neglectV)whichyieldsbi12/