半导体物理与器件(尼曼)02章答案new

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1、rdSemiconductorPhysicsandDevices:BasicPrinciples,3editionChapter2SolutionsManualProblemSolutionsChapter2ProblemSolutions−25pxk=−5410./gms−342.1Computerploth662510.xλ==⇒−25p5410.x2.2Computerplotor°λ=12.3A2.3Computerplot−17(ii)K.E.==Te100VxJ=1610.2.4−24pm=⇒2Tpxk=−5410./gms2πxForproblem2.2;Ph

2、ase=−=ωtconstanth°λλ=⇒λ=123.AThenp2πdxdxFλI−19(b)Proton:K.E.==Te11VxJ=.610⋅−=ω0or==v+ωλdtdtpH2πK−−2719pm==22Tbg1..67x10bg16x102πxForproblem2.3;Phase=+=ωtconstantorλ−23pxk=−2.3110gm/sThen−342πdxdxFλIh662510.x⋅+=ω0or==v−ωλ==⇒pHK−23λdtdt2πp2.3110xor°2.5λ=0287.Ahchc(c)TungstenAtom:At.Wt.=183.9

3、2Eh==⇒=νλλE−19ForTe==11VxJ.610−19Gold:Ee==490..V()4901610b.xJgpm=2TSo−−2719−3410=21839216610()..bgxxbg1610.bg662510.xxbg310−5λ=⇒2.5410xcmor()−194.901610b.xg−22pxk==31310./gmsorλµ=0254.m−34h662510.xλ==⇒−22−19p31310.xCesium:Ee==190..V()1901610b.xJgSoor°bg662510.xx−34bg31010λ=00212.A−5λ=⇒6541

4、0.xcm()−19(d)A2000kgtravelingat20m/s:1901610..bgxpm==v()200020()⇒ororλµ=0654.m4pxk=−410gms/−342.6h662510.xλ==⇒−194(a)Electron:(i)K.E.==Te11VxJ=.610p410x−−3119orpm==2T29.1110bgxbg1610.x−°28λ=16610.xAor9rdSemiconductorPhysicsandDevices:BasicPrinciples,3editionChapter2SolutionsManualProblemSo

5、lutions2.7or33−22−3Ex=⇒182210.JExe=11410.VEk==T()00259.⇒avg22Alsoor−314pm==vbg9.1110xbg210x⇒Ee=001727.Vavg−26px=−182210./kgmsNowNowpm=2Eavgavg−34h662510.xλ==⇒−−31()19−26=29.1110bgbgxx0017271610..p182210.xor°λ=364A−26pxk=−7.110gm/savg(b)−34Nowhx662510.p==⇒−34−10h662510.xλ12510xλ==⇒−26−26p7.

6、110xpxk=−5310./gmsorAlso°λ=933.Ap5310.x−264v===58210./xms−31m9.1110x2.8orhc6vx=58210./cmsEh==νppλpNowNow11223−142Em==vbg9.1110xbg58210.x2ph1FhI22eE=andp=⇒E=eeeHGKJor2mλ2mλee−21−3ExJ=⇒15410.Ex=9.6410eVSetEE=andλλ=10pepeThen2.1022hc1FhI1F10hIb662510.−34gb3108g==hcxxλλ2mHGKJ2mHGλKJ(a)Eh===ν−1

7、0pepλ110xwhichyieldsor100hExJ=19910.−15λ=p2mcNow2−−1519hchc2mcEeV=⋅⇒19910..x=bg1610xVEE===⋅=2mcpλ100h100sop32Vx==12.410Vk12.4V−31829.1110bxxgb310g=⇒−−3115100(b)pm==2E29.1110bgxbg19910.xSo−23=−60210./xkgms−15ExJk==16410..103eVThen−34h662510.x°2.9λ==⇒λ=011.A−23p