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1、IEEETRANSACTIONSONELECTRONDEVICES,VOL.49,NO.8,AUGUST20021375AThermalDesignMethodologyforMultifingerBipolarTransistorStructuresDavidJ.Walkey,SeniorMember,IEEE,DritanCelo,TomJ.Smy,andRobertK.SurridgeAbstract—Atechniqueispresentedthatallowstheincreaseinalsonot
2、asusefulincomparingdifferentstructuresquicklytomaximumtemperatureriseduetothermalcouplinginmultifingerestablishdesigntradeoffs,whichforeitherofthesemethodsstructurestobepredictedforawiderangeoffingerlengthsandrequiresacompletesimulationforeverycaseofinteres
3、t(e.g.,spacingsbyreferencetoasingle,normalizedcharacteristic.Appli-everycombinationoflengthsandspacingsforastudyofthecationofthisapproachtothedesignofthermalresistanceinmul-tifingerstructuresresultsinafastandstraightforwardmethodforrelationshipbetweentheset
4、wovariableswithinafamilyofgeneratingfamiliesofstructuresthatmeetgivenpowerandtem-devices).peraturecriteriawithoutthermalsimulation-basedoptimization.ThispaperpresentsanewapproachtothepredictionofTheusefulnessofthisapproachisillustratedthroughsolutionofamaxi
5、mumtemperaturerise,andhencethermalresistance,inapracticaldesignproblem,andtheaccuracyofthemethodisveri-multifingerarray:thedevelopmentofanormalizationstrategyfiedbycomparisonwiththefinalsolutionstonumericalsimulation.thatallowsthecreationofagenericmultifing
6、ercouplingcharac-IndexTerms—Bipolarmodeling,multifingerstructures,thermalteristicindependentofparticulargeometry.Themethodisthenmodeling.applicabletoawidevarietyofemitterlengthsandinterfingerspacingsbymappingeachstructureintothenormalizedspaceI.INTRODUCTION
7、andallowsafastexplorationofthedesignspacewhenchoosingNMANYhigh-powercircuitapplications,abipolartran-amultifingerstructure.Theresultsarewithin5%ofnumericalIsistorisrequiredtocarryaverylargestaticcurrent.Whensimulationforemitterlengthsfrom10to40mandinterfing
8、erthemaximumcurrentdensityisfactoredin,therequiredactivespacingsfromatypicalminimumof4–5mtoapracticallimitofemitterareamaybetoolargeforreliablefabricationorthere-morethantheemitterlength.Therepresentat
