外延半导体：理论，生长和表征Heteroepitaxy of Semiconductors Theory， Growth， and Characterization.pdf

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1、7195_book.fmPageiThursday,December21,20068:59AM7195_book.fmPageiiiThursday,December21,20068:59AMTitlePageHETEROEPITAXYOFSEMICONDUCTORSTHEORY,GROWTH,ANDCHARACTERIZATIONJohnE.AyersUniversityofConnecticutStorrs,CT,U.S.A.©2007byTaylor&FrancisGroup,LLC7195_book.fmPageivThursday,December21,20068:5

2、9AMThecoverfigurerepresentsconduction-bandminimum(CBM)wavefunctionsofa6000-atom(110)x(1–10)x(001)GaAsquantumdot.Thewavefunctionamplitude,averagedalongthe[001]direction,isplottedinthe(001)plane.Heteroepitaxialquantumdotsareofinterestformanyappli-cationsincludinglasersandsingle-electrontransist

3、or.FigureprintedbypermissionoftheNationalRenewableEnergyLaboratory,Golden,CO.CRCPressTaylor&FrancisGroup6000BrokenSoundParkwayNW,Suite300BocaRaton,FL33487-2742©2007byTaylor&FrancisGroup,LLCCRCPressisanimprintofTaylor&FrancisGroup,anInformabusinessNoclaimtooriginalU.S.GovernmentworksPrintedin

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