低温三步法成分调控对pi衬底cigs薄膜材料与器件影响的分析

低温三步法成分调控对pi衬底cigs薄膜材料与器件影响的分析

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时间:2019-03-01

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1、AbstractCopperindiumgalliumselenide(Cu(In,Ga)Se2,CIGS)thinfilmsolarcellwithadvantagesofhighconversionefficiency,goodstabilityandanti—radiationability,isoneofthemostpromisingthin-filmsolarcells.Owingtotheadvantagesofhighpowertoweightratio,suitabletoroll—to-rolldepositionprocess,mono

2、lithicintegrationandflexiblefoldable,commercialdevelopmentprospectsofCIGSthinfilmsolarcelldepositedonflexiblepolyimidesubstrategetextensiveattentions.Atpresent,theconversionefficiencyofCIGSthinfilmsolarcellonPIfoilhasbeenimprovedto20.4%bySwissFederalLaboratoriesforMaterialSciencean

3、dTechnology(EMPA),whichisalsotheconversionefficiencyworldrecordofCIGSminfilmsolarcells.Inthispaper,theinfluenceofcompositioncontrolonCIGSthinfilmpropertiesanddeviceperformanceareinvestigated,includingdepositionrateandgradientdistribution.ForlargeareaCIGSthinfilmsolarcellsonPIsubstr

4、ates,studiesofMobackcontactonPIfoils,metalgrid,filmuniformityandotheraspectsarealsocarriedOtat.SincethemaximumtemperatureforPIistypicallybelow4500C,CIGSdepositionhastousetheSOcalledlow—temperaturethree-stagec0一evaporationprocess.Becauseoftherestrictionofmaximumsubstratetemperatures

5、,CIGSthinfilmshavethedisadvantagesofpoorcrystallizationquality,roughsurfaceandsteepcompositiongradient,whichresultinpoordeviceperformance.DepositionrateandelementgradientdistributionarekeyissuesofhighqualityCIGSthinfilmsandcorrespondingdevices.Inthesecondstageofthree—stageprocess,C

6、IGSfilmsexperienceaseriesofphasetransitions,depositionrateinthisstagehasasignificantimpactonthegrowthmechanismofCIGSthinfilms.DuringthesecondstagethecrystallinityandgraincompactnessofCIGSthinfilmsarepromotedwithincreasingdepositionrates,double.peakreflectionpatternisreducedobviousl

7、y,whichCanreducetheIIIAbstractrecombinationinthegrainboundaryandhelptoimprovetheconversionefficiencyoftheCIGSsolarcellsignificantly.However,accordingtotheexperimentalresults,highergrowthratesduringthesecondstageleadtoroughersurfaceandlowercarrierconcentration.Highersurfaceroughness

8、canbeattributedtothelarger

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