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ID:33818235
大小:13.08 MB
页数:89页
时间:2019-03-01
《低温三步法成分调控对pi衬底cigs薄膜材料与器件影响的分析》由会员上传分享,免费在线阅读,更多相关内容在行业资料-天天文库。
1、AbstractCopperindiumgalliumselenide(Cu(In,Ga)Se2,CIGS)thinfilmsolarcellwithadvantagesofhighconversionefficiency,goodstabilityandanti—radiationability,isoneofthemostpromisingthin-filmsolarcells.Owingtotheadvantagesofhighpowertoweightratio,suitabletoroll—to-rolldepositionprocess,mono
2、lithicintegrationandflexiblefoldable,commercialdevelopmentprospectsofCIGSthinfilmsolarcelldepositedonflexiblepolyimidesubstrategetextensiveattentions.Atpresent,theconversionefficiencyofCIGSthinfilmsolarcellonPIfoilhasbeenimprovedto20.4%bySwissFederalLaboratoriesforMaterialSciencean
3、dTechnology(EMPA),whichisalsotheconversionefficiencyworldrecordofCIGSminfilmsolarcells.Inthispaper,theinfluenceofcompositioncontrolonCIGSthinfilmpropertiesanddeviceperformanceareinvestigated,includingdepositionrateandgradientdistribution.ForlargeareaCIGSthinfilmsolarcellsonPIsubstr
4、ates,studiesofMobackcontactonPIfoils,metalgrid,filmuniformityandotheraspectsarealsocarriedOtat.SincethemaximumtemperatureforPIistypicallybelow4500C,CIGSdepositionhastousetheSOcalledlow—temperaturethree-stagec0一evaporationprocess.Becauseoftherestrictionofmaximumsubstratetemperatures
5、,CIGSthinfilmshavethedisadvantagesofpoorcrystallizationquality,roughsurfaceandsteepcompositiongradient,whichresultinpoordeviceperformance.DepositionrateandelementgradientdistributionarekeyissuesofhighqualityCIGSthinfilmsandcorrespondingdevices.Inthesecondstageofthree—stageprocess,C
6、IGSfilmsexperienceaseriesofphasetransitions,depositionrateinthisstagehasasignificantimpactonthegrowthmechanismofCIGSthinfilms.DuringthesecondstagethecrystallinityandgraincompactnessofCIGSthinfilmsarepromotedwithincreasingdepositionrates,double.peakreflectionpatternisreducedobviousl
7、y,whichCanreducetheIIIAbstractrecombinationinthegrainboundaryandhelptoimprovetheconversionefficiencyoftheCIGSsolarcellsignificantly.However,accordingtotheexperimentalresults,highergrowthratesduringthesecondstageleadtoroughersurfaceandlowercarrierconcentration.Highersurfaceroughness
8、canbeattributedtothelarger
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