低温三步法成分调控对pi衬底cigs薄膜材料与器件影响的分析

《低温三步法成分调控对pi衬底cigs薄膜材料与器件影响的分析》由会员上传分享，免费在线阅读，更多相关内容在行业资料-天天文库。

1、AbstractCopperindiumgalliumselenide(Cu(In，Ga)Se2，CIGS)thinfilmsolarcellwithadvantagesofhighconversionefficiency，goodstabilityandanti—radiationability，isoneofthemostpromisingthin-filmsolarcells．Owingtotheadvantagesofhighpowertoweightratio，suitabletoroll—to-rolldepositionprocess，monolithicintegra

2、tionandflexiblefoldable，commercialdevelopmentprospectsofCIGSthinfilmsolarcelldepositedonflexiblepolyimidesubstrategetextensiveattentions．Atpresent，theconversionefficiencyofCIGSthinfilmsolarcellonPIfoilhasbeenimprovedto20．4％bySwissFederalLaboratoriesforMaterialScienceandTechnology(EMPA)，whichisa

3、lsotheconversionefficiencyworldrecordofCIGSminfilmsolarcells．Inthispaper,theinfluenceofcompositioncontrolonCIGSthinfilmpropertiesanddeviceperformanceareinvestigated，includingdepositionrateandgradientdistribution．ForlargeareaCIGSthinfilmsolarcellsonPIsubstrates，studiesofMobackcontactonPIfoils，me

4、talgrid，filmuniformityandotheraspectsarealsocarriedOtat．SincethemaximumtemperatureforPIistypicallybelow4500C，CIGSdepositionhastousetheSOcalledlow—temperaturethree-stagec0一evaporationprocess．Becauseoftherestrictionofmaximumsubstratetemperatures，CIGSthinfilmshavethedisadvantagesofpoorcrystallizat

5、ionquality,roughsurfaceandsteepcompositiongradient，whichresultinpoordeviceperformance．DepositionrateandelementgradientdistributionarekeyissuesofhighqualityCIGSthinfilmsandcorrespondingdevices．Inthesecondstageofthree—stageprocess，CIGSfilmsexperienceaseriesofphasetransitions，depositionrateinthiss

6、tagehasasignificantimpactonthegrowthmechanismofCIGSthinfilms．DuringthesecondstagethecrystallinityandgraincompactnessofCIGSthinfilmsarepromotedwithincreasingdepositionrates，double．peakreflectionpatternisreducedobviously,whichCanreducetheIIIAbstractrecombinationinthegrainboundaryandhelptoimprovet

7、heconversionefficiencyoftheCIGSsolarcellsignificantly．However,accordingtotheexperimentalresults，highergrowthratesduringthesecondstageleadtoroughersurfaceandlowercarrierconcentration．Highersurfaceroughnesscanbeattributedtothelarger