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ID:33818169
大小:13.08 MB
页数:89页
时间:2019-03-01
《低温三步法成分调控对pi衬底cigs薄膜材料与器件影响的分析》由会员上传分享,免费在线阅读,更多相关内容在行业资料-天天文库。
1、AbstractCopperindiumgalliumselenide(Cu(In,Ga)Se2,CIGS)thinfilmsolarcellwithadvantagesofhighconversionefficiency,goodstabilityandanti—radiationability,isoneofthemostpromisingthin-filmsolarcells.Owingtotheadvantagesofhighpowertoweightratio,suitabletoroll—to-rolldepositionprocess,monolithicintegra
2、tionandflexiblefoldable,commercialdevelopmentprospectsofCIGSthinfilmsolarcelldepositedonflexiblepolyimidesubstrategetextensiveattentions.Atpresent,theconversionefficiencyofCIGSthinfilmsolarcellonPIfoilhasbeenimprovedto20.4%bySwissFederalLaboratoriesforMaterialScienceandTechnology(EMPA),whichisa
3、lsotheconversionefficiencyworldrecordofCIGSminfilmsolarcells.Inthispaper,theinfluenceofcompositioncontrolonCIGSthinfilmpropertiesanddeviceperformanceareinvestigated,includingdepositionrateandgradientdistribution.ForlargeareaCIGSthinfilmsolarcellsonPIsubstrates,studiesofMobackcontactonPIfoils,me
4、talgrid,filmuniformityandotheraspectsarealsocarriedOtat.SincethemaximumtemperatureforPIistypicallybelow4500C,CIGSdepositionhastousetheSOcalledlow—temperaturethree-stagec0一evaporationprocess.Becauseoftherestrictionofmaximumsubstratetemperatures,CIGSthinfilmshavethedisadvantagesofpoorcrystallizat
5、ionquality,roughsurfaceandsteepcompositiongradient,whichresultinpoordeviceperformance.DepositionrateandelementgradientdistributionarekeyissuesofhighqualityCIGSthinfilmsandcorrespondingdevices.Inthesecondstageofthree—stageprocess,CIGSfilmsexperienceaseriesofphasetransitions,depositionrateinthiss
6、tagehasasignificantimpactonthegrowthmechanismofCIGSthinfilms.DuringthesecondstagethecrystallinityandgraincompactnessofCIGSthinfilmsarepromotedwithincreasingdepositionrates,double.peakreflectionpatternisreducedobviously,whichCanreducetheIIIAbstractrecombinationinthegrainboundaryandhelptoimprovet
7、heconversionefficiencyoftheCIGSsolarcellsignificantly.However,accordingtotheexperimentalresults,highergrowthratesduringthesecondstageleadtoroughersurfaceandlowercarrierconcentration.Highersurfaceroughnesscanbeattributedtothelarger
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