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1、ABSTRACTABSTRACTAsthethird-generationsemiconductor,widebandgapmaterialGaNhassomeelectricalpropertiesbetterthanthoseofSi.Highelectronmobilitytransistor(HEMT)basedonAlGaN/GaNheterostructureisabletoadapttohightemperature,highvoltage,highfrequencyandhighpowerapplications.AlGaN/GaN
2、HEMTisidealfornewpowersemiconductordevice.ButAlGaN/GaNHEMTasapowerdevicehasaseriesofproblemsneededtobesolved,suchasimprovementofbreakdownvoltage,achievementofenhancement-modedeviceandsoon.Inthispaper,explorationandresearchhavebeenconducteduponsomeoftheseissues,mainlyasfollows:
3、1.Basedonrelevantreferences,anintroductionofmajorprocessesofdepletion-modeAlGaN/GaNHEMTismadeandprocessstepsoftapeoutexperimentdetermined,includingOhmiccontact,deviceisolation,Schottkycontact,metaltrace,passivationdielectriclayer,fieldplatemetalandthickmetal.Layoutofdeviceisdr
4、awnandtapeoutexperimentconductedaccordingtotheprocess.Transfercharacteristics,outputcharacteristicsandbreakdowncharacteristicsareanalyzedbasedonthetestresults,particularlytheinfluenceofthegate-sourceandgate-drainspacingonelectricalpropertyofthedevice.Themaximumdrainsaturationc
5、urrentofthedevicereaches730mA/mmandthebreakdownvoltageisgreaterthan100Vatthegate-sourcespacingof1.5μm.2.Twocommonmethodsofachievingenhancement-modeAlGaN/GaNHEMT--recessgateandnegativechargesimplantedintogateregionarestudiedbycomputersimulation.Thevariationwithrecessdepthandden
6、sityofnegativechargesoftransfercharacteristicsofthedeviceisanalyzed.Anenhancement-modeAlGaN/GaNHEMTthresholdvoltageanalyticalmodelisbuilt.Bystudyingthebandgapstructureofgateregionatequilibriumandaddingtheinfluenceofsurfacestatechargesonthresholdvoltage,theanalyticalformulaofth
7、resholdvoltageofenhancement-modedeviceisacquired.Simulationresultofthresholdvoltageofthedeviceis0.87Vandmodelresultis0.58Vattherecessdepthof20nm.Simulationresultofthresholdvoltageofthedeviceis1.95Vandmodelresultis1.99Vatthedensityofnegativechargesof19-31.05×10cm.Modelresultsar
8、ecomparedwithsimulationresultswiththatmatchandenhancement-mod
