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ID:33763483
大小:11.80 MB
页数:49页
时间:2019-03-01
《线性正磁电阻材料硒化银的掺杂改性分析》由会员上传分享,免费在线阅读,更多相关内容在行业资料-天天文库。
1、华中科技大学硕士学位论文aquadraticfielddependenceofTMRatlowfieldandalinearandnonsaturatingoneathighfieldupto50T,andTMRincreaseswithdecreasingindiumcontent,themaximumwasfoundtobe400%,thisshouldbeattributetothedisorderinthemacrostructureofthematerial,whichiscorrespondi
2、ngtothetheclassicaldisordermodel.TheexistenssofAgInSe2phasewillincreasetheresistivityofthematerial,whichcandecreasetheelectricalnoiseintheapplicationofmagneticfieldmeasurement,howevertheTMRwillbedecreasedsimultaneously.Therefore,addinganappropriateamounto
3、fAgInSe2phasecanincreasetheperformanceofthematerialinthemagneticfieldmeasurement.Keywords:linearmagnetoresisitance,hydrothermalmethod,compositematerials,substitutionalsolidsolutionIII万方数据华中科技大学硕士学位论文目录摘要....................................................
4、............................................................................IAbstract.........................................................................................................................II1.绪论...........................................
5、...............................................................................11.1线性磁电阻效应研究情况简介.........................................................................11.2硫族银化合物材料简介........................................................................
6、.............71.3本文研究思路和内容.......................................................................................132.水热法制备掺杂Ag2Se材料体系及其工艺研究................................................152.1Ag2Se及类似化合物制备工艺概述..............................................
7、...................152.2水热法制备Ag2Se体系材料工艺研究............................................................172.3测试表征结果与讨论........................................................................................252.4本章小结..........................................
8、..................................................................343.Ag2Se-AgInSe2复合材料块材输运性质研究........................................................363.1引言.........................................................
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