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1、ABSTRACTABSTRACTTHz(Terahertz,THz)isanelectromagneticradiationwhichusuallyreferstothefrequencyrangewithin0.1THz-10THzinthetransitionareaofmacro-electronicsandmicro-photonics.THzhasalotofimportantapplications,suchaswirelesscommunication,radarimaging,detectionofsubstances,andmedicaldiagnosis.P
2、romotingthepracticalapplicationofterahertzscienceneedstoprovidegoodTHzfunctionaldevices,suchasterahertzmodulators,switches,filters,amplifiersandsoon.Sincehigh-frequencyelectronicdevicesandopticaldeviceapplicationsbringaseriousdeteriorationintheTHz,researchonelectronicfunctionalmaterialsandfu
3、nctionaldeviceswillbeveryimportant.Inthiscontext,wecombinateoftheVO2filmandmetamaterial,andsimulate,designanddevelopTHzmodulatordevice.ThisthesisexplorestheprocessparametersofgoodperformanceVO2filmspreparedbyRFmagnetronsputtering.UsingX-raydiffractionanalyzer,scanningelectronmicroscopy,andfo
4、ur-pointproberesistivitytestplatform,weanalyzethefilmmicrostructureandelectricalperformance,focusingontheoxygenpartialpressureandsubstratetemperatureinfluenceonthegrowthofthefilm.Experimentaltestanalysisshowsthatthefilmpropertiesareverysensitivetooxygenpartialpressureandsubstratetemperature.
5、WepreparedaresistancemutationsoverthreeordersofmagnitudebehavingsuperiorperformanceVO2byoptimizingprocessparameters,whicniscriticalforthedevelopmentofTHzdevices.ThenstudyontheeffectofbufferlayerthicknessandtheoxygenpartialpressureonthegrowthVO2thinfilmtransistorstructure,microstructureandpro
6、pertiesofMITperformanceonPtmetalfilms.TestresultsshowthethicknessoftheSiO2bufferlayercanalleviatethestressbetweenVO2betweenandmetalfilmstress.Attherightoftheoxygenpartialpressure,highqualityofVO2filmbebavingsignificant(011)preferredorientationwillbegrown.Thechangeinresistanceisoverthreeorder
7、sofmagnitude,andthefilmhasuniformdistributionofthegrainswithsmoothanddensesurface.Weapplyvoltageonthefilmobservingsignificantjumpladdercurrentandacurrenthysteresisloop,confirmingthephenonmenentofVO2filmelectroluminescentphasetransition,whichissigni
