铜线键合界面特性与规律分析

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1、中自太学硕±学＆*立ABSTRACTWiththecopperwirebondingasthemainobjectinthepaper，TheinterracialmicrostructuresoftheCu-wirebondingtoanAIpadisobserved，thecompositionofthebondinginterfacecompoundsisdetermined，hebondinginterfacecompoundformationmechanismisanalyzed，andtherelationshipbetweenthecopper

2、bondingprocessbondingtemperature，bondingultrasonicenergy，chipaluminumthicknessandthebondingstrengthisexploredBesidesthereisalargeimpactonchipcantileverbondingprocessinthecopperwirebondingprocess，andthedynamiccharacteristicsofalargereboundandlowintensityofthecopperwirebondingpointTo

3、solvethisprobIem，289mthicknessofthealuminumchipsisproposedinsteadof109rnthicknessofthealuminumchipTheresearchworkincludesthefollowingsections：Firstly，HRTEMtestresultsshowthatuntilthecopperkeyco—temperaturerisesto340。CbeforethecompoundsgeneratedbetweenCu—AIinterfacebondinginterface；

4、X-raydiffractionanalysisshowedthattheCu—AIinterfacetogenerateCuAl2，Cu9A14；AfterCu—AIinterfacecompoundisgenerated，thebondingstrengthandbondingsuccessrateissgnificandvenhancedSecondly，therelationshipbetweenthebondingtemperature，theevolutionofultrasonicenergy，thealuminumtbicknessandbo

5、ndstrength：asthebondingtemperatureincreasedto340。C，thedimpleareaofthebondinginterfaceismoreobvious，morefullybonded，thebondingstrengthhigher；appropriateultrasoundenergy(5mW)ultrasoundenergyisconducivetotheformationofcopperwirebondingstrength，whiletOOlOWortoohighcanleadtocopperwirebo

6、ndingstrength；bondingchipstocoverthe289mthickaluminumfilmcaneffectivelyreducethehardnessvalueofthechiptoimprovethebondingsmoothtoensurethatthecopperwirebondingmorefullytoenhancethequalityofcopperwirebondingThirdlycopperwirebondingprocessf研chipcantileverhasalargeimpact，thedynamiccha

7、racteristicsofthebigreboundandlowintensity中南大学硕士学位论文ofthecopperwirebondingpoint，comparethedynamiccharacteristicsofthealuminumfilmthicknessofthechip289mand10umaluminumthicknessofthechipandbondingstrength，theresultsshow：thedynamiccharacteristicsoftheformerismorestable，morepronouncedd

8、impleareamorefullybonded，a