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ID:33225392
大小:25.80 MB
页数:86页
时间:2019-02-22
《硅纳米线阵列的制备与光伏应用的分析》由会员上传分享,免费在线阅读,更多相关内容在行业资料-天天文库。
1、———————————————』堕堕一AbstractPhotovoltaictechnologyisoneoftheeffectivewaystOsolvetheener譬y嘶SjsandenVlronmentalpollution。Atpresent,crystallinesiliconsolarcellsremaillthebastsofthecurrentphotovoltaicindustry.However,thehighcostofcrystallinesiltconsolarceJJ8hasg
2、reatlyhinderedthedevelopmentofthephotovoltaicindus魄Siliconnanowires(SiNWs)areconsideredaspromisingmaterialstoacbievehigheffictencⅥJowcOStsolarcells,duetotheirexcellentlightabsorbingpropertiesande伍cientcafTlerseparationperformance.Therefore,theresearchonsili
3、connanowirearravsforpnotoVoltaicapplicationsisverymeaningful.Inthispaper,t11eantirenectionpropertiesofSiNWsarray,solarcellperformance,aswellassu—hceDassivationofSiNWsarrayhasbeenresearched.Theresultsweobtainedareasfoilo、vS:(1)mSiNWsarraycanbecreatedbymetal.
4、assistedchemicaletching(MACE)astheAgnanoparticlesfilmverticallysink.Theleng_tllofSiNWsarrayscanberegulatedbyadjustingtheetchingtime.withetchingtimeforsiliconsubstrates,ThelengthsofSiNWsarmyincreaselinearlySiliconnanowirearrayshasalowreflectance(<1%)overawid
5、erange(300-1000nm).TheSiNWarraysoflongerlengthhaVeloWerreflectaIlcemourinvestigatedlengthrange.TheSiNWsolarcellexhibitsahigherpowerconversionefficiencyof8.84%thanthecellbasedonpolishedsiliconwafer,underthesameconditionofcompactcontactofthefrontsurfaceelecn.
6、ode.Wef-oundthatthereasonfortheincreaseofcellefficiency,inadditiontotheexcellentantireflectionpropertiesofSiNWsarrays,istheimprovedlong.wavelengthsunlightabsorptionwhichreducestherecombinationofminoritycarrier.(2)ThelengthoftheSiNWsarraysCanbemanipulatedbya
7、djustingtllereactiontime·FlaereflectancedecreaseswiththeSiNWs’lengthincreasing.Bvcombiningthermaloxidationandhydrofluoricacidtreatment,wecanmaIliDulatetllefillingratioofSiNWs.WiththeSiNWs’fillingratiodecreasing,therefleclancedecreasesatfirst,andthenincrease
8、s.Si/Si02coaxialnanowiresarraycanbeobtainedbythermaloxidationofas-grownSiNWsarray.Theresultsshowmat廿1esilicondioxideshellCannotonlyfurtherreducethereflectanceofSiNWsarray,butalsopasslVatesurfacestateso
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