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1、Thermal/ThinFilmsPotentialSolutionsDetailsTableofContents:PotentialSolution:OxideExtensions-NitridedOxide1PotentialSolution:ModestK(5-10)--NitrideOxideorOxynitrideStack2PotentialSolution:ModestK(5-10)--Other,Al2O3,...3PotentialSolution:MediumK(10-20)amorphous--UnaryOxides:ZrO2,HfO2,Y2O3,La2O3,Gd2O3
2、,Sc2O3…4PotentialSolution:MediumK(10-20)amorphous--Silicates:(Zr,Hf,Y,La,Gd,Sc,…)–SiO25PotentialSolution:HighK(>20)--Amorphous:LaandYAluminatesandrareearthaluminatealloys6PotentialSolution:HighK(>20)--SingleCrystal:LaAl3O4,BaZrO3,Y2O3,La2O3...7PotentialSolution:InterfacialLayerforGateDielectric--Ox
3、ide/NitridedOxide8PotentialSolution:InterfacialLayerforGateDielectric--Oxynitride,Nitride9PotentialSolution:InterfacialLayerforGateDielectric--Other,Al2O3,MgO,Silicates...10PotentialSolution:InterfacialLayerforGateDielectric--DirectDepositiononSilicon11PotentialSolution:ToolsandMethodforGateDielect
4、ric--Furnace,RPECVD,RTCVD,JVD,ALCVD,MBE,oxidationofmetals,sputtering,inorganicandorganicsources,etc.11PotentialSolution:ProcessforIntegrationofDielectricandGate—(VerticalorHorizontal)ReplacementGate12PotentialSolution:GateElectrode--PolyGate--SilicidesonPoly14PotentialSolution:GateElectrode--PolyGa
5、te--SilicidesonPolySi-Ge14PotentialSolution:GateElectrode--DualMetalGate-LowWorkFunctionMetalforNMOSGate15PotentialSolution:GateElectrode--DualMetalGate-HighWorkFunctionMetalforPMOSGate16PotentialSolution:ToolsandMethodsforGateElectrodes16PotentialSolution:NewStructuresforGateElectrodes--DoubleGate
6、SOIandVerticalTransistors17PotentialSolution:High-MobilityChannelMaterials–StrainedSiandSi-Ge-C1820PotentialSolution:OxideExtensions-NitridedOxideBacktoTableofContentsDescription:OxideextensionsincludecaseswherecontrolledamountsofnitrogenareintroducedattheSilicon/Oxideinterfacetoreduceinterfacialst
7、ressandinterfacestatedensityaswellastoprovideamorestableinterfaceduringchargeinjection(channelhotelectronorstress-inducedleakagecurrentconditions)KeyCharacteristics:Inadditiontotheirimprovedstabilitydurings
