半导体纳米线激光器弯曲效应的分析

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1、器的研究提供更全面的理论参考，在提高纳米激光器性能和改善光电子器件封装技术方面有重要的推动作用。关键字：半导体纳米线；激光器；弯曲效应；损耗；红移；偏振IIIAbstractNanoscalelasershaveattractedagreatdealofinterestinscientificandtechnologicalapplications，suchasprecisionmeasurementatmolecularlevel，superresolutionmicroscopy,integratedoptoelectronicsandbiophotonics．Owingtoitsmu

2、ltifunctionalpropertiestobeanidealnanolaser,includinggainmedia，resonantcavityandpassivewaveguides，semiconductornanowire㈣laserhasgainedgrowingattention．Ontheotherhand，withthevirtueofhigh—aspect-ratio，easilybentsemiconductorNWshavecontributedalottothedevelopmentoftheflexibleelectronics．Agreatnumbero

3、ftheoreticalandexperimentalstudieshavebeendevotedforabetterunderstandingoftheopticalandelectronicpropertiesofbentsemiconductorNWs．Centraltoprogressinthisareahavebeentheinvestigationsaboutelectronicproperties，passivewaveguidesandluminescenceproperties．However，tothebestofourknowledge，fewresearchesab

4、outthebendingeffectsonthelasingactionofsemiconductorNWshavebeenreported，whichcouldbeveryimportantandessentialtofurtherinvestigationsaboutimprovementsofthenanolasersandwideapplicationsinintegratedoptoelectronicsystem．Inthispaper，basedonthegeneraldescriptionofvariouskindsofnanolasersandinfluenceonth

5、epropertiesofsemiconductorNWswithdifferenttypesofstrain，weinvestigatethebendingeffectsonthesemiconductorNWlaserssystematically，includingtheloss，threshold，modes，andpolarizationsInthefirstpart，westartourinvestigationfrombendinglossandthresholdconditionofthesemiconductorNWlaser．Ascurvatureradiusreduc

6、es，bendinglossincreases，thresholdincreasesanddifferentialefficiencydecreases．Itisworthmentioningthatwehavediscoveredaveryinterestingphenomenon：thebendinglossofthethickNWishigherthanthatofthethinone．Withthehelpofthesoftwaresimulations，wecomeupwiththeconclusionthatthemode—dependenceofthebendinglossi

7、sresponsibleforthisabnormalphenomenon．Inthesecondpart，wemakeanalysesoftheoutputspectrafromtheemissionend，andproposeamethodtomodulatethepolarizationofthelaseremission．Red-shiftinIVthelaserspectraismuchmoreobvioust