低温烧结制度对zno-bi2o3基压敏陶瓷显微结构与电性能的影响

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1、低温烧结制度对ZnO-Bi2O3基压敏陶瓷显微结构与电性能的影响程丽红SlavkoBernikMatejkaPodlogar郑瞭赢李国荣江西科技师范大学Jo?efStefanInstitute中国科学院上海硅酸盐研究所摘要：采用传统电子陶瓷的制备工艺，制备了相同BiO含量、Sb2O3/Bi2O3比分别为0.25、0.50的ZnO-Bi2O3基压敏陶瓷,研究在800°C-950°C区间内一步烧结与两步烧结制度对陶瓷的显微结构与电性能的影响。显微结构分析表明，烧结过程中足够的肮2。3液相有利于烧结，而且能够促进晶粒内含反演边

2、界(InversionBoundary)的ZnO晶粒的长大。烧成的样品具有发育良好的显微结构:高的致密度、均匀的含Bi第二相分布以及粒径，而且电性能良好:压敏电压327-670V/mm,非线性系数20-31,漏电流低于0.5uAoSb2(X含量较高的样品，晶粒尺寸较小，压敏电压和非线性系数较大，漏电流较小。研究还发现，ZnO晶粒尺寸以受两步烧结制度里占主要的烧结过程的影响为主。研究结果表明：与传统的iooor以上烧结相比，合理的配方是保证在800°C-950°C[X间内烧结获得综合性能良好的压敏陶瓷样品的关键。关键词：Z

3、nO;压敏;显微结构;电性能;作者简介：程丽红(1982-),女，博士。收稿日期:2017-03-19基金：国家自然科学基金(51107140)InfluenceofLowTemperatureSinteringRegimesontheMicrostruetureandElectricalPropertiesofZn0-Bi203BasedVaristorsCHENGLihongSLAVKOBernikMATEJKAPodlogarZHENGLiaoyingLIGuorongJiangxiKeyLaboratoryofS

4、urfaceEngineering,JiangxiScience&TechnologyNormalUniversity;JoZefStefanInstitute;ShanghaiInstituteofceramics,ChineseAcademyofSciences;Abstract：Bytraditiormlceramicprocessingmethod,ZnO-basedvaristorceramicswiththesameamountofBl2O3andSb2(VBi2()3二0.25,0.50maredasLC1

5、andLC2respectivelywereprepared.Theyweresinteredbyatraditionalonestageortwo-stageregimesinthetemperaturcrangeof800°C-950°C.Microstructuralanalysisresultsconfinnedthatthepresenceofrich-Bi2O3-basedliquidphasewasgoodforsintering,andcouldalsopromotethegraingrowthwitht

6、heinversionboundaries(TB)insidetheZnOgrainsformedbySb203-Thesampleshadaproperdensity,homogeneousdistributionofBi20：-richsecondaryphaseandgrainsize.ThesamplespossessedgoodpropertieswithbreakdownvoltagesEbintherangeof327V/mm-670V/mm,nonlinearcoefficienta20to31,andl

7、eakagecurrentILlowerthan0.5uA.LC2haveasmalleraveragegrainsize,higherEbanda,andalowerILthanLC1.Resultsalsoconfirmedthatthetemperatureofthemainsinteringstageplayedthemainroleininfluencingtheaveragegrainsize.Conclusionsweregiventhatasuitablecompositionenablestheprop

8、ermicrostructuredevelopmentandgoodcurrent-voltagecharacteristicsofthevaristorsinthetemperaturerangeof800°C-950°C.Keyword：ZnO;varistor;microstructure;electrical