vo22fnb3asrtio3异质结的电学性质与纳米团簇对vo2薄膜光电性质影响的研究

vo22fnb3asrtio3异质结的电学性质与纳米团簇对vo2薄膜光电性质影响的研究

ID:32371034

大小:8.15 MB

页数:75页

时间:2019-02-03

vo22fnb3asrtio3异质结的电学性质与纳米团簇对vo2薄膜光电性质影响的研究_第1页
vo22fnb3asrtio3异质结的电学性质与纳米团簇对vo2薄膜光电性质影响的研究_第2页
vo22fnb3asrtio3异质结的电学性质与纳米团簇对vo2薄膜光电性质影响的研究_第3页
vo22fnb3asrtio3异质结的电学性质与纳米团簇对vo2薄膜光电性质影响的研究_第4页
vo22fnb3asrtio3异质结的电学性质与纳米团簇对vo2薄膜光电性质影响的研究_第5页
资源描述:

《vo22fnb3asrtio3异质结的电学性质与纳米团簇对vo2薄膜光电性质影响的研究》由会员上传分享,免费在线阅读,更多相关内容在学术论文-天天文库

1、北京交面^学硕±学位镕女ABSTRACTABSTRACT:Va.nadiumdioxide(V02)isa§olid-statematerial,whenthe他mp亡r舢erisesto68℃thereversibletransformationfromnon-metalphasetometalphasewillhappenV02phasetransitionisaccompaniedbyreversiblemutationofthemateriallsresistance,magneticsuscepti

2、bility,andlighttransmittanceThephasetransitiontemperaturecanbeloweredtonearroomtemperaturebydoping,therefore,V02iswide。vappliedinmanyfieldsOnonehand,V02andothersemiconductormaterialscanbeusedtoprepareheterojunctionphotoelectricdetectors,photovoltaiccellsand

3、otheroptuelectzonicdevices;theotherhand,thedirectpreparationofV02thinfilmsonthesubstratecanbeappliedtothedevelopmentofthesmartglassandlaserprotectivedevicesThekeyoflarge—scaleapplicationofV02thinfilmsishowtoreducethephasetransitiontemperaturetoroomtemperatu

4、reandwithouttheinfluenceonthemutationamplitudeoftheopticalandelectricalproper【iesAmongseveralmethods,dopingisaneffectivemethodBaseoiltheformerexperienceontheissueandrelatedliterature,wemainlystudyontheopticalandelectricalpropertiesofV02thinfilmswhichisdoped

5、bythemeanofnanoclustersinthispaper.ThedopingofV02thinfilmisaclljevedbypreparingnanoclustersstructure,whichtakeadvantageofthewayofsurfacetensionself-assemblinginnanosphereslithographyAndthenweriseRFmagnetronspuneringtechniqueforthinfilmdepositionBythoseproce

6、dures,wepreparedtwokindsV02filmcontainingnanochistersstructureoneofthemisnotdoped,theotherisdopedbyPtInthispapertheoptimizedconditionforpreparingV02filmsissummarized,andtheoptical·electricalpropertiesofthosefilmsarethefocusofmyresearchStudieshaveshownthatth

7、eresistancemutationrateofnon-dopedV02thinfilmscontainingnanoclustersstructm'ecallreach818%.themutationrateofopticaltransmissionisabletobe15%atwavelengthof1100nm,thephasetransitiontemperatureisbetween56-72'CAtthesfl//letime.theresistancemutationrateofV02thin

8、filmsPtnanochistersdopingisupto667%.themutationrateofopticaltransmissionearlreach7%atwavalengthof1100nmthephasetransitiontemperature北京交通大学硕±学《*女isbetween38·58℃ComparingwiththeconventionalV02thinfilms,w

当前文档最多预览五页,下载文档查看全文

此文档下载收益归作者所有

当前文档最多预览五页,下载文档查看全文
温馨提示:
1. 部分包含数学公式或PPT动画的文件,查看预览时可能会显示错乱或异常,文件下载后无此问题,请放心下载。
2. 本文档由用户上传,版权归属用户,天天文库负责整理代发布。如果您对本文档版权有争议请及时联系客服。
3. 下载前请仔细阅读文档内容,确认文档内容符合您的需求后进行下载,若出现内容与标题不符可向本站投诉处理。
4. 下载文档时可能由于网络波动等原因无法下载或下载错误,付费完成后未能成功下载的用户请联系客服处理。