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ID:32371034
大小:8.15 MB
页数:75页
时间:2019-02-03
《vo22fnb3asrtio3异质结的电学性质与纳米团簇对vo2薄膜光电性质影响的研究》由会员上传分享,免费在线阅读,更多相关内容在学术论文-天天文库。
1、北京交面^学硕±学位镕女ABSTRACTABSTRACT:Va.nadiumdioxide(V02)isa§olid-statematerial,whenthe他mp亡r舢erisesto68℃thereversibletransformationfromnon-metalphasetometalphasewillhappenV02phasetransitionisaccompaniedbyreversiblemutationofthemateriallsresistance,magneticsuscepti
2、bility,andlighttransmittanceThephasetransitiontemperaturecanbeloweredtonearroomtemperaturebydoping,therefore,V02iswide。vappliedinmanyfieldsOnonehand,V02andothersemiconductormaterialscanbeusedtoprepareheterojunctionphotoelectricdetectors,photovoltaiccellsand
3、otheroptuelectzonicdevices;theotherhand,thedirectpreparationofV02thinfilmsonthesubstratecanbeappliedtothedevelopmentofthesmartglassandlaserprotectivedevicesThekeyoflarge—scaleapplicationofV02thinfilmsishowtoreducethephasetransitiontemperaturetoroomtemperatu
4、reandwithouttheinfluenceonthemutationamplitudeoftheopticalandelectricalproper【iesAmongseveralmethods,dopingisaneffectivemethodBaseoiltheformerexperienceontheissueandrelatedliterature,wemainlystudyontheopticalandelectricalpropertiesofV02thinfilmswhichisdoped
5、bythemeanofnanoclustersinthispaper.ThedopingofV02thinfilmisaclljevedbypreparingnanoclustersstructure,whichtakeadvantageofthewayofsurfacetensionself-assemblinginnanosphereslithographyAndthenweriseRFmagnetronspuneringtechniqueforthinfilmdepositionBythoseproce
6、dures,wepreparedtwokindsV02filmcontainingnanochistersstructureoneofthemisnotdoped,theotherisdopedbyPtInthispapertheoptimizedconditionforpreparingV02filmsissummarized,andtheoptical·electricalpropertiesofthosefilmsarethefocusofmyresearchStudieshaveshownthatth
7、eresistancemutationrateofnon-dopedV02thinfilmscontainingnanoclustersstructm'ecallreach818%.themutationrateofopticaltransmissionisabletobe15%atwavelengthof1100nm,thephasetransitiontemperatureisbetween56-72'CAtthesfl//letime.theresistancemutationrateofV02thin
8、filmsPtnanochistersdopingisupto667%.themutationrateofopticaltransmissionearlreach7%atwavalengthof1100nmthephasetransitiontemperature北京交通大学硕±学《*女isbetween38·58℃ComparingwiththeconventionalV02thinfilms,w
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