一种强抗闩锁igbt的设计

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1、ABSTRACTABSTRACTInsulatedGateBipolarTransistor(IGBT)isanimportantkindofpowerelectronicdeviceswhichhavebeenappliedtoalotoffields.ThelargedemandforIGBTincreasesrapidlyeachyearinChina.ThedomesticIGBTresearchisstartedlately.AlthoughtheIGBTtechniqueinChinahasmadegreatbreakthrou

2、ghsoverthepastfewyears,theIGBTproductisshortinspeciesdiversityandreliability.Therefore,itissignificanttoresearchIGBTdeeply.Atfirst,theIGBT’sthreeimportantproperties(turn-off,turn-on,switching)arepresentedinthisdissertation.Andthenthetheoryoflatch-upandsomekindsofdesignwhic

3、hcanenhancethecapabilityoflatch-upareintroducedatlength.Inordertoimprovethedevice’scapabilityoflatch-up,thepaperdesignsanovelkindofIGBT.ThenewkindofIGBThasaSiO2buriedlayerwhoseshapeis―L‖.AndtheSiO2buriedlayerisunderthedevice’sP-basewhichcanenhancethecapabilityoflatch-upbyc

4、onfiningthemoveofholes.Fora600VnewIGBT,throughtheanalysisandsimulationaboutparametersofcellandSiO2buriedlayer,wefindthenewIGBT’scapabilityoflatch-upismuchbetterthanthetraditionalIGBT.TheprocesssequenceofthenewIGBTisdesignedinthispaperatlast.Becauseofthelimitationofdomestic

5、conditions,thefollow-upworkistofindmoresuitableprocessingmethodsforthecharacteristicsoftheproductionlineandtape-out.Keywords:IGBT,latch-up,SiO2II万方数据目录目录第一章绪论...........................................................................................................11.1IGBT

6、的产生和课题研究意义.......................................................................11.2IGBT的发展进程...........................................................................................21.3国内IGBT发展和现状.........................................................................

7、........51.4本文的主要工作............................................................................................6第二章IGBT的基本结构和原理.........................................................................72.1IGBT的基本结构............................................................

8、...............................72.2IGBT的内部参数.............................................