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1、ABSTRACTABSTRACTOTPmemory,thatisone-timeprogrammablememory,withthecharacteristicsof
permanentpreservationofdata,lowpowerconsumption,simplestructure,highspeed
andsoon,iswidelyusedasembeddedmemory,whichisusedtostoresystem
configurationinformation,param
2、etersvalue,calibrationtableandcode.OTPmemoryis
alsousedinmanyothersituationswhereexchangeofdataisnotrequiredorrarely
required.CurrentlyonthemarkettherearetwomainkindsofOTPmemory,typeof
fuseandanti-fuse.TheprocessoftraditonalOTPmemoryiscomplex,requiri
3、ngspecial
materials,thatmakeitdifficulttoapplyintheSOC.Fortheabovereasons,ourteamdesignaOTPmemorywhichissuitablefor
applyingintheSOC.Inthispaper,achargepumpsystemisdesignedtoprovide
programmingvoltagefortheOTPmemoryunderthestandardprocess.Howtogenera
4、te
theprogrammingvoltageofbitlineisthekeypointofthisdesign.Firstofall,acertain
chargepumpcircuitstructurewhichissuitabletogeneratetheprogrammingvoltageof
OTPmemorywasselectedforthispaper,afteranalyzingtheseveralcommonlyhigh
voltagegeneratedstructures
5、.Second,afteranalyzingseveralcommonlyclassicaltypes
ofthechargepump,andcontrastingtheiradvantagesanddisadvantages,weconclude
thattheswitchingchargepumpwithtwothresholdvoltagepulledisbestchoice.There
aretwobasicprinciplesinthedesigningofthechargepumps
6、ystem.First,avoid
generatingahighvoltagewhichbeyondtherangeofbreakdownvoltagethatordinary
transisterscanbear,toensurethechargepumpsystemworknormallyduring
programming.Secondly,focusonimprovingtheprogrammingsuccessrate,reducing
thechipareaandtheripple
7、ofthebitvoltageduringprogramming.Third,improvethe
readrangeofprogrammingnode,toavoidmisreadingofstoreddataledbythe
nonlinerarityofbrokenresistancevalue.Thechargepumpsystemdesigned,hasthefollowingfeaturesduringthe
simulation.First,thereisnohighvoltage
8、generatedwhichbeyondtheenduraceofthe
normaltrasister,therippleofbitvoltageissmall,withahighprogrammingsuccessrate
andalargereadrangeofstoreddata.FinallythechargepumpsystemwastapeoutedinII万方数据ABSTRACTthecommercialprocess,andcouldworknormally.Keywords:
