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1、z，MaterialScieneeFoundation^exercisesChapter1Structureofmaterials1.testsshowthatafacecenteredcubicisequaltoanindividualsquarestructure.Ineludingthe2.crystalplanedrawnincubicsystem{110},{111}planes,and(112)and(10)crystaL3.(121)and(100)determinedbythecrystalbandaxisand(001)and(111)determined
2、bythecrystalbandaxisofthecrystalsurfaceindex・4.calculatethearealdensityandthedistancebetweenthefacecenteredcubicstructures(111),(110)and(100)planes・5.FeAlisanelectroniccompound,havingaBCC,tryingitscell,calculatingitselectronconcentration,anddrawinga(112)surfaceatomicarray.6.alloyphasesVC,F
3、e3C,CuZnandZrFe2belongtothetypeandtheirstructuralfeaturesarepointedout・Thesecondchapteriscrystaldefects1.,thevacancygenerationenergyofcopperis1.7x10一19J.Thenumberofvacanciesinlcm3copperiscalculatedat1000DEGC,thedensityofcopperis8.9g/cm3,therelativeatomicmassis63.5,andtheBoltzmannconstantis
4、K二1.38*10一23J/K.IfthedislocationloopisshowninFigure2-1,thedescriptionofthenatureoftheDanwrong,andthatextraedgedislocationpositionsemiatomicsurface・Figure2.2-2,acrystalslipplaneofaPAT，SBvectorforthedislocationloop,underuniformshearstresstestanalysisoftaueffect:Thedislocationloopstructuretyp
5、etheDanwrong;Foreachsinglefaultforce;Intimeundertheactionofdislocationloopwillbehowtoexercise?Intimeundertheactionofdislocationloopisstationaryandtheminimumradiusshouldbehowmuch?3.drawingexplainsF-Rdislocationsource,dislocationmultiplicationprocess・4.proofofrelationshipbetweendislocationde
6、nsityandcrystalbendingradiusofcurvatureRofRho二.5..Fig・3-1showstwopinnededgedislocationsA~BandC~Dwhoselengthisx,andhasthesamedislocationlinedirectionandPAT'Svector,eachdislocationcanbeusedasaF-Rdislocationsource・Assumethatthetwodislocationisexpanding,butintheinteractionofdislocationloops,is
7、pinneddislocationmovement,ortheformationofalargefaultsource?Ifyoucanformalargefaultsource,isthehighdislocationsourceattherequiredcriticalshearstresshowmuch?Thethirdchapteristhesolidificationofpuremetal1.iftheliquidmetalintheformofasphericalcrystalnucleus,there
