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1、附录AFujiIGBTModulesApplicationManualPowerconverters,suchasvariable-speedmotordrivesanduninterruptiblepowersuppliesforcomputers,wererevolutionizedwiththeintroductionofbipolarpowertransistormodulesandpowerMOSFETs.Thedemandforcompact,lightweight,andefficientpowerconvertershasconsequentlyalsopro
2、motedtherapiddevelopmentoftheseswitchingdevices.BipolartransistormodulesandMOSFETshowever,cannotfullysatisfythedemandsofthesepowerconverters.Forexample,whilebipolarpowertransistormodulescanwithstandhighvoltagesandontrollargecurrents,theirswitch-ingspeedisratherslow.Conversely,powerMOSFETssw
3、itchfast,buthavealowwithstandvoltageandcurrentcapacity.Therefore,tosatisfytheserequirements,theinsulatedgatebipolartransistor(IGBT)wasdeveloped.TheIGBTisaswitchingdevicedesignedtohavethehigh-speedswitchingperformanceandgatevoltagecontrolofapowerMOSFETaswellasthehigh-voltage/large-currenthan
4、dlingcapacityofabipolartransistor.ComparesthebasicstructureofanIGBTandapowerMOSFET.TheIGBTischaracterizedbyap+-layeraddedtothedrainsideofthepowerMOSFETstructure.Itisthisp+-layerthatenablesthevariousIGBTfeaturesexplainedinthismanual.AsshowninFig.1-2,theidealIGBTequivalentcircuitisamonolithic
5、Bi-MOStransistorinwhichapnpbipolartransistorandapowerMOSFETaredarlingtonconnected.Applyingapositivevoltagebetweenthegateandtheemitter,awitchesontheMOSFETandproducealowresistanceeffectbetweenthebaseandthecollectorofpnptransistor,therebyswitchingiton.Whentheappliedvotagebetweenthegaateandthee
6、mitterissetto”0”,theMOSFETwillswitchodd,causingthesupplyofbasecurrenttothepnptransistortostopandtherebyswitchingthatoffaswell.ThismeansthatanIGBTcanbeswitchedonandoffusingvoltagesignalsinthesamewayasapowerMOSFET.LikethepowerMOSFET,apositivevoltagebetweenthegateandtheemitterproducesacurrentf
7、lowthroughtheIGBT,switchingiton.WhentheIGBTison,positivecarriersareinjectedfromthep+-layeronthedrainsideintothen-typebaseslayer,therebyprecipitatingconductivitymodulation.ThisenablestheIGBTtoachieveamuchloweron-resistancethanapowerMOSFET.TheIGBThasaveryl
