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1、附录AFujiIGBTModulesApplicationManualPowerconverters,suchasvariable-speedmotordrivesanduninterruptiblepowersuppliesforcomputers,wererevolutionizedwiththeintroductionofbipolarpowertransistormodulesandpowerMOSFETs.Thedemandforcompact,lightweight,andefficientpowerconvertershasconsequentl
2、yalsopromotedtherapiddevelopmentoftheseswitchingdevices.BipolartransistormodulesandMOSFETshowever,cannotfullysatisfythedemandsofthesepowerconverters.Forexample,whilebipolarpowertransistormodulescanwithstandhighvoltagesandontrollargecurrents,theirswitch-ingspeedisratherslow.Conversel
3、y,powerMOSFETsswitchfast,buthavealowwithstandvoltageandcurrentcapacity.Therefore,tosatisfytheserequirements,theinsulatedgatebipolartransistor(IGBT)wasdeveloped.TheIGBTisaswitchingdevicedesignedtohavethehigh-speedswitchingperformanceandgatevoltagecontrolofapowerMOSFETaswellasthehigh-
4、voltage/large-currenthandlingcapacityofabipolartransistor.ComparesthebasicstructureofanIGBTandapowerMOSFET.TheIGBTischaracterizedbyap+-layeraddedtothedrainsideofthepowerMOSFETstructure.Itisthisp+-layerthatenablesthevariousIGBTfeaturesexplainedinthismanual.AsshowninFig.1-2,theidealIG
5、BTequivalentcircuitisamonolithicBi-MOStransistorinwhichapnpbipolartransistorandapowerMOSFETaredarlingtonconnected.Applyingapositivevoltagebetweenthegateandtheemitter,awitchesontheMOSFETandproducealowresistanceeffectbetweenthebaseandthecollectorofpnptransistor,therebyswitchingiton.Wh
6、entheappliedvotagebetweenthegaateandtheemitterissetto”0”,theMOSFETwillswitchodd,causingthesupplyofbasecurrenttothepnptransistortostopandtherebyswitchingthatoffaswell.ThismeansthatanIGBTcanbeswitchedonandoffusingvoltagesignalsinthesamewayasapowerMOSFET.LikethepowerMOSFET,apositivevol
7、tagebetweenthegateandtheemitterproducesacurrentflowthroughtheIGBT,switchingiton.WhentheIGBTison,positivecarriersareinjectedfromthep+-layeronthedrainsideintothen-typebaseslayer,therebyprecipitatingconductivitymodulation.ThisenablestheIGBTtoachieveamuchloweron-resistancethanapowerMOSF
8、ET.TheIGBThasaveryl
