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ID:28950557
大小:11.49 MB
页数:234页
时间:2018-12-15
《高电荷态离子与固体表面相互作用机理研究毕业论》由会员上传分享,免费在线阅读,更多相关内容在学术论文-天天文库。
1、兰州大学博:l:研究生学位论义并结合实验结果,讨论了表面的电子激发对势能溅射过程的可能贡献。利用高电荷态Xeq+离子入射到云母材料表面,通过原子力显微镜(AFM)观察到了表面的丘状纳米突起,初步建立了表面纳米缺陷直径及高度与入射离了势能和动能的关系。估算了形成此种纳米缺陷对应的移位原子数。同时介绍了在方向上最新的实验研究结果。在高电荷态Xeq+(q=5~26)离子辐照高定向石墨(HighlyOrientedPyrolyticGraphite,HOPG)表面的实验中,利用Raman光谱和XPS(X.rayPhotoelectricSpectros
2、copy)测量,观测到了石墨表面结构由sp2向sp3杂化的现象,表明在石擞表面有类金刚石结构的生成。讨论了此转化过程与入射离子势能和入射剂量间的关系。通过改变入射离子动能,发现对于速度较慢的离__f,它能将更大比例的势能沉积到材料表面区域,从而更加有效地在石墨表面产生类金刚石结构。关键词:高电荷态离子,势能溅射,阈值效应,能损增强,表面纳米缺陷,类金刚石结构,金属,云母,高定向石墨¨兰州大学博‘l:研究牛学位论文AbstractHighlyChargedIon(HCI)istheioninhighchargestate,whichisprodu
3、cedbythetossofmostoralloftheatom’Sboundedelectrons.ThemostoutstandingfeatureisthegreatamountofpotentialenergycarriedbyHCI.ThestudyontheinteractionofHCIandmaterialattractsgreatinterestsinastrophysics,atomicphysics,radiationbiology,nano—materialandthedesignoffusionreactor.Duet
4、otheuniquepropertyofHCI,ithastheveryspecialapplicationinsurfaceanalysisandsurfacemodificationatthenanoscale,thustheHCIhasbeenexpectedasanewgenerationtoolforthemicroelectronicengineering.Additionally,HCIisthefavoritecandidateinmedicalapplicationofheavyioncancertherapysincethe
5、specialinteractionbetweenthewell-acceleratedHCIandorganics.Inthisthesis,weintroduced:thespecialpropertiesofHCI;theHCIsourcefacilitiese.g.ElectronCyclotronResonanceIonSource(ECRIS)andElectronBeamIonTrap(EBIT);aswellastheproposedtheorymodelsandtheexperimentalresultsinthisstudy
6、field.Inourwork,thestudiesofsputteringproducedbyHCIinteractionwithvarioussolidsurfaceswerereportedfirst.Theworkabouthillock—likenanodefectinducedbybombardmentofHCIonmicasurfacewasalsointroduced.Last,theinvestigationonthediamond—likecarbonproductionbyimpactingofHClonHOPGsurfa
7、cewaspresented.OnthestudyofsputteringinducedbyHCI,thehighlychargedArq+(q=l-16),Pb9+(q=4~36)ionswithvariouskineticenergieswereemployedtoimpactonthekindsoftargets,includingthemetals:gold(Au),copper(Cu),aluminum(AI),niobiumfNb),molybdenum(Mo),tantalum(Ta);thesemiconductor:N-typ
8、esilicon(Si);theinsulator:silicondioxide(si02).UsingaMCPdetector,thesputter
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