4h-sic浮动结sbd的三维模拟研究

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1、····摘要摘要碳化硅（SiC）材料以其显著的优势成为下一代高功率器件材料的首选。碳化硅浮动结肖特基二极管（FJ-SBD）器件相比于传统SBD器件，通过在漂移区引入P型掺杂的浮动结，有效提高了SBD器件的功率优值，具有广阔的应用前景。为了改善4H-SiCFJ-SBD的导通电阻和击穿电压之间的矛盾，本文提出一种具有三维浮动结的碳化硅SBD器件，利用ISE-TCAD软件三维模拟并研究其正反向特性。主要工作如下：建立了三维浮动结SBD器件仿真的单胞结构，对比得到二维条状与三维块状浮动结器件的正反向特性，反向击穿电压分别为

2、1622V和1611V，正向导通电阻从5.63mΩ·cm2降低为4.90mΩ·cm2。三维块状浮动结结构的SBD比二维浮动结器件功率优值BFOM因子提高了16.5%。对比了不同浮动结形状、排布的SiCSBD器件的正反向特性，结果表明带有圆柱形浮岛结构的4H-SiCSBD相比于其它浮岛形状器件有更低的导通电阻，相比二维条纹状浮岛器件减小了20%。改变浮动结的排列方式为交错型，可以在反向击穿电压不变的情况下使其正向导通电阻比对齐排布浮岛器件减小了13.7%，相比条纹状减小了24.9%。交错排布浮动结结构的4H-SiCS

3、BD具有更高的功率优值。本文对4H-SiCSBD器件的三维模拟表明，三维浮岛结构能够改善4H-SiCFJ-SBD器件的导通电阻和击穿电压之间的权衡问题，对将来SiCSBD的设计研制具有一定的指导意义。关键词：4H-SiCFJ-SBD导通电阻击穿电压三维模拟···万方数据······AbstractAbstractSiliconcarbide(SiC)isthepreferredmaterialforthenextgenerationofhigh-powerdevicesduetoitssignificantadva

4、ntage.ComparedwithconventionalSBDdevices,thepoweroptimalvalueofFJ-SBDdevicesiseffectivelyimprovedwiththeintroductionofaP-typefloatingjunctioninthedriftregionofthedevice.Asaresult,FJ-SBDdeviceshaveabroaderapplicationprospect.Inordertoimprovethecontradictionbetw

5、eentheresistanceandbreakdownvoltageof4H-SiCFJ-SBD,ASchottkybarrierdiode(SBD)structurewithathree-dimensional(3-D)floatinglayerisproposed.ISE-TCADsoftwareisusedtomaking3-DsimulationofthefloatingjunctionSBDandanalyzingitspositiveandnegativecharacteristics.Themain

6、workisasfollows:Aunitcellstructureof3-DFJ-SBDdevicesimulationisestablishedinordertocomparethepositiveandnegativecharacteristicsofFJ-SBDwith2-Dand3-DFJstructure.Thereversebreakdownvoltageof2Dand3DFJstructureare1622Vand1611V,respectively.Thespecificon-resistance

7、isdecreasedfrom5.63mΩ·cm2to4.90mΩ·cm2.TheBFOMvalueof3-DFJisincreasedby16.5%comparedwith2-DFJ.PositiveandnegativecharacteristicsofdifferentFJshapesandarrangementsofSiCSBDdevicesarecompared.4H-SiCSBDdiodewithacylindricalfloatingjunctionhasaloweron-resistance(dec

8、reasedby20%)than2-Dstripesdevices.Afterchangingthearrangementoffloatingjunctiontostaggered,thereversebreakdownvoltageofthedeviceisalmostthesame,whileitsforwardresistanceisdecreased