谈述论文2009

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1、谈述论文2009谈述论文2009导读：nductors,ChineseAcademyofScience,P.O.Box912,Beijing100083,China);HongLiang,Zhu;LingHui,Jia;XiangFei,Chen;56789全所EI论文20091.TheinfluenceofgroperatureandinputV/IIIratioontheinitialnucleationandmaterialpropertiesofInNonGaNbyMOCVD.;Yang,H.Source:SemiconductorScienceandTechnolog

2、y,v24,n5,2009Database:pendex2.HeteroepitaxialgroiconductorMaterialLaboratory,InstituteofSemiconductors,ChineseAcademyofSciences,Beijing,100083,China);Sun,G.S.;Liu,X.F.;Li,J.Y.;Zhao,.;Zeng,Y.P.Source:MaterialsScienceForum,v600-603,p251-254,2009,SiliconCarbideandRelatedMaterials2007Language:En

3、glishDatabase:pendex3.ApplicationofsampledgratingtocontrolthelasingiconductorMaterialsScience,InstituteofSemiconductors,ChineseAcademyofScience,P.O.Box912,Beijing100083,China);HongLiang,Zhu;LingHui,Jia;XiangFei,Chen;56789谈述论文2009(2)导读：uage:EnglishDatabase:pendex5.ChemicaletchingofaGaSbcrysta

4、lincorporatedanmethodundermicrogravityconditionsChen,Xiaofeng(KeyLaboratoryofSemiconductorMaterialsandDevices,InstituteofSemiconductors,ChineseAcademyofSciences,Beijing100083,ChiDuanHua,Kong;LieSong,eetings(POEM)2008:OptoelectronicDevicesandIntegrationLanguage:EnglishDatabase:pendex4.Designf

5、oranIOblockarrayinatile-basedFPGADing,Guangxin(InstituteofSemiconductors,ChineseAcademyofSciences,Beijing100083,China);Chen,Lingdou;Liu,ZhongliSource:JournalofSemiconductors,v30,n8,p085008-1-085008-6,August2009Language:EnglishDatabase:pendex5.ChemicaletchingofaGaSbcrystalincorporatedanmethod

6、undermicrogravityconditionsChen,Xiaofeng(KeyLaboratoryofSemiconductorMaterialsandDevices,InstituteofSemiconductors,ChineseAcademyofSciences,Beijing100083,China);Chen,Nuofu;iconductors,v30,n8,p083006-1-083006-5,August2009Language:EnglishDatabase:pendex6.AneagingsystemHe,Shan(SchoolofElectroni

7、cInformationEngineering,Beiji56789谈述论文2009(3)导读：,August2009Language:EnglishDatabase:pendex7.Echobroadeningeffectintherange-gatedactiveimagingtechniqueOSLNAGeng,Zhiqing(St56789谈述论文2009(4)导读：emiconductors,v20,n10,p105015-1-6,October2009Language:Engli