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1、┊┊┊┊┊┊┊┊┊┊┊┊┊装┊┊┊┊┊订┊┊┊┊┊线┊┊┊┊┊┊┊┊┊┊┊┊┊Synthesisofan8051-LikeMicro-ControllerToleranttoTransientFaultsThispaperpresentstheimplementationofafaultdetectionandcorrectiontechniqueusedtodesignarobust8051micro-controllerwithrespecttoaparticulartransientfaultcalledSingleEventUpse
2、t(SEU).AspecificstudyregardingtheeffectsofaSEUinthemicro-controllerbehaviorwasperformed.Furthermore,afaulttoleranttechniquewasimplementedinaversionofthe8051.TheVHDLdescriptionofthefault-tolerantmicroprocessorwasprototypedinaFPGAenvironmentandresultsintermsofareaoverhead,le
3、velofprotectionandperformancepenaltiesarediscussed.1.IntroductionTheconstantimprovementsachievedinthemicroelectronicstechnologyallowthemanufacturingofverycomplexcircuits,substitutingboardsorevencomputersofthepast80’s.Nowadays,becauseofthemicroelectronicsadvances,traditiona
4、lapplicationsbecomecheaperandmorereliable,whilealargerangeofnewapplicationscantakeadvantageofintegrateddevicesbyusingtheso-calledembeddedsystems.Inallcases,architecturesarestronglybasedonsomekindofdataprocessor,suchasamicro-controlleroraDSPprocessingunit,forexample.Thecont
5、inuousdecreaseinthesemiconductordimensionsandinelectricalfeatures,leadstoanincreasingsensitivitytosomeeffectsoftheenvironment(ionizationduetoradiation,magneticperturbations,thermal,...)consideredminorornegligibleinthetechnologiesofthepast.Particularly,digitalcircuitsoperat
6、inginspacearesubjecttodifferentkindsofradiation.However,someproblemshavealsobeenreportedforsomeEarthapplications,likeavionicssystems.Radiationeffectscanbepermanentortransient.Permanentfaultsresultfromparticlestrappedatthesilicon/oxideinterfacesandappearonlyafterlongexposur
7、etoradiation(TotalIonizationDose).Transientfaults(SingleEventEffects,SEE)maybecausedbytheimpactofasinglechargedparticleinsensitivezonesofthecircuit.Dependingontheimpactlocation,twokindofSEEsaredistinguished:SELs(Single共17页第17页┊┊┊┊┊┊┊┊┊┊┊┊┊装┊┊┊┊┊订┊┊┊┊┊线┊┊┊┊┊┊┊┊┊┊┊┊┊EventLat
8、chups)andSEUs(SingleEventUpsets).SELsresultfromthetriggeringofparasiticthyristors(present
