materials 2012 comprehensive study of lanthanum aluminate high-dielectric-constant gate oxides for advanced cmos devices

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1、Materials2012,5,443-477;doi:10.3390/ma5030443OPENACCESSmaterialsISSN1996-1944www.mdpi.com/journal/materialsReviewComprehensiveStudyofLanthanumAluminateHigh-Dielectric-ConstantGateOxidesforAdvancedCMOSDevicesMasamichiSuzukiAdvancedLSITechnologyLaboratory,Corpo

2、rateResearch&DevelopmentCenter,ToshibaCorporation,8Shinsugita-cho,Isogo-ku,Yokohama235-8522,Japan;E-Mail:masamichi2.suzuki@toshiba.co.jpReceived:7January2012;inrevisedform:8February2012/Accepted:6March2012/Published:14March2012Abstract:Acomprehensivestudyofth

3、eelectricalandphysicalcharacteristicsofLanthanumAluminate(LaAlO3)high-dielectric-constantgateoxidesforadvancedCMOSdeviceswasperformed.ThemostdistinctivefeatureofLaAlO3ascomparedwithHf-basedhigh-kmaterialsisthethermalstabilityattheinterfacewithSi,whichsuppress

4、estheformationofalow-permittivitySioxideinterfaciallayer.CarefulselectionofthefilmdepositionconditionshasenabledsuccessfuldepositionofanLaAlO3gatedielectricfilmwithanequivalentoxidethickness(EOT)of0.31nm.DirectcontactwithSihasbeenrevealedtocausesignificantten

5、silestraintotheSiintheinterfaceregion.ThehighstabilityoftheeffectiveworkfunctionwithrespecttotheannealingconditionshasbeendemonstratedthroughcomparisonwithHf-baseddielectrics.Ithasalsobeenshownthattheeffectiveworkfunctioncanbetunedoverawiderangebycontrollingt

6、heLa/(La+Al)atomicratio.Inaddition,gate-firstn-MOSFETswithultrathinEOTthatusesulfur-implantedSchottkysource/draintechnologyhavebeenfabricatedusingalow-temperatureprocess.Keywords:LaAlO3;high-k;gatedielectrics;metalgate;MOSFET;schottkysource/drain;EOT;directco

7、ntactMaterials2012,54441.IntroductionHigh-kgatedielectricshavebeenwidelyresearchedoverthelastdecadeandarecurrentlybeingusedinpracticaldevices[1].Thefirstgenerationofhigh-kmaterialswereHf-baseddielectricsbecauseHfatomshavethesamevalencestateasSiatoms(+4)andcan

8、thereforeeasilyreplacethem.However,almostallHf-basedhigh-kdielectricsonSiareaccompaniedbyaninterfaciallayerwithlowpermittivityattheinterfacewithSi.AccordingtothelatestInternationalTechnol