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ID:16279403
大小:2.17 MB
页数:100页
时间:2018-08-08
《硕士论文-固相外延cosi2薄膜技术在深亚微米cmos器件上的应用研究》由会员上传分享,免费在线阅读,更多相关内容在学术论文-天天文库。
1、复旦大学;r程硕士学位论文Y952459学校代码:10246学号:033021101硕士学位论文(专业学位)复旦大学;r程硕士学位论文Q相外政CoSi2緣JBiiULft深JMBL米CMOS«^上的產用所走院系(所):信息科学与工程学院专业.电子与通信工程■姓名:陆杰指导教师药国平教授:完成曰期2005年11月11日••ABSTRACTItiswellknownthatcontactandinterconnectionofself-alignedCoSizS/DandgateISoneofthekeyprocesstechnologiesofsub--0.25mCMOSde
2、viceandcircuitfabrication.Recently,heteroepitaxialCoSis,preparedbyinterlayermediatedsolidphaseepitaxy(IMSPE)technology,shovssuperiorelectricalcharacteristicsandthermalstability,cofflparedwithconventionalpolyCoSij.Especiallytitaniuminterlayermediatedepitaxy(TIME)isconsideredtobequitecompati
3、blewithcurrentCMOSprocess,whichalsocanbeself-alignedtoformepitaxialsilicidecontactandinterconnectioninthesource/drain(S/D)andgatearea.SoTIMEtechnologyisverypromisinginapplicationfordeepsub-microndevicefabrication.Inthisthesis,twotopicsrelatedtotheepitaxyofCoSijanditsapplicationarestudied.O
4、neIsCo/Ti/SimultilayersolidphasereactionwithTiNcappingandthepropertiesoftheepitaxialCoSUfilm.TheotheristheapplicationofTIMEtechnologyintestwafersat0.18Wnbaselineandevaluatingitsfeasibilityinsub-0.25MmCMOSfabrication.复旦大学;r程硕士学位论文MultilayerstructureofCo/Ti/SiisusedtoformtheepitaxialCoSU.The
5、structureandcompositionofsilicidefilm,interfacebetweenCoSijandSisubstrate,epitaxydualityofCoSizfilm,thermalstabilityandself-alignedprocesswindowareinvestigatedbymeansoffourpointprobe(FPP),X^raydiffraction(XRD),scanningelectronmicroscopy(SEM)andcrosssectionaltransmissionelectronmicroscopy(T
6、EM).TheroleofTiasinterlayerlayerduringtheepitaxialgrowthofCoS“isalsoanalyzedandrevealedbycomparingCoSiithinfilmswhichareformedbythereactionofCo/SiandCo/Ti/Sisystemsrespectively-Mainexperimentalresultsarelistedbelow:(1)TheinterfaceformedbyTIMEbetweenCoSi2andSisubstrateisverysmooth;(2)Thefil
7、mshowsgoodepitaxialqualitywithproperprocessconditions;(3)TheepitaxialCoSijfilmshowsgoodthermalstability,anditcanremainlowresistivityafterannealingattemperatureuptollOO'C.Experimentsontestwaferswith0-18Mmbaselineprocessaredoneinproductlineaccordingtocentralcond
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