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1、超大规模集成电路铜互连电镀工艺（Copperinterconnectplatingprocessforverylargescaleintegratedcircuit）1.doubleembeddedcopperinterconnectprocessWiththecontinuousimprovementofchipintegration,copperhasreplacedaluminumasthemainstreaminterconnecttechnologyinVLSImanufacturin
2、g.Asanalternativetoaluminum,copperwirescanreduceinterconnectimpedance,reducepowerandcost,andimprovechipintegration,devicedensity,andclockfrequency.Becauseofthecopperetchingisverydifficult,sothecopperinterconnectusingdualDamascenetechnology,alsocalled
3、DoubleTechnology(DualDamascene),Damascus1)firstdepositedathinlayerofsiliconnitride(Si3N4)asadiffusionbarrierlayerandetchingterminationlayer,2)theninthesiliconoxidedepositedonacertainthickness(SiO2),3thenthemicrohole)lithography(Via),4)onthethroughhol
4、epartetching,5)afteratrenchlithography(Trench),6)tocompleteetchedviasandtrenches,7)followedbysputtering(PVD)diffusionbarrierlayer(TaN/Ta)andcopperseedlayer(SeedLayer).TheroleofTaistoenhancetheadhesionofCuandtheseedlayerisusedasaconductivelayerplating
5、,8)aftertheplatingprocessisthecopperinterconnects,9)isthefinalannealingandchemicalmechanicalpolishing(CMP),flattenedprocessingandcleaningofcoppercoating.Electroplatingisthemainprocesstocompletecopperinterconnect.Thecopperplatingprocessofintegratedcir
6、cuitusuallyadoptselectroplatingsolutionofsulfatesystem.Thebathiscomposedofcupricsulfate,sulfuricacidandwater,whichislightblue.Whenthepowerisaddedbetweenthecopper(anode)andthesilicon(cathode),thesolutiongeneratesanelectriccurrentandformsanelectricfiel
7、d.Theanodecopperreactsintocopperionsandelectrons,andthecathodealsoreactswithformationdepositedonthesiliconsurfaceofcopperionsandelectronsnearthecathode,copperionsundertheinfluenceoftheelectricfieldfromtheanodetothecathode,andtheconcentrationoftheloss
8、ofthedirectionalmovementnearthecathode.Themainpurposeofelectroplatingistodepositadense,seamless,seamlessandotherdefectanduniformlydistributedcopperonsiliconwafer.2.theroleoforganicadditivesinelectroplatingcopperprocessThecopperplatinginasmalllocalare
