现代闪存命名规则

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1、PartNumberSystemChangeNoticeEffectivefromAugust6,2007,amoreconcisepartnumberingsystemisutilizedbyHynixwiththeintentionofmanagingproductlinewithmoreconsistency.DevicesdevelopedafterAugust2007andtheirrespectiveproductswillbeRefertothefollowingpagesformor

2、edetails.(www.hynix.com/pn_notice.jsp)PartNumberwithprefix‘HY’->OldPartNumberDecoderLinkPartNumberwithprefix‘H’->NewPartNumberDecoderLink‘H’PartNumberLastUpdated:Dec.2007NANDFlashPARTNUMBERINGH27XXXXXXXXX-XX(1)HYNIX(1)(2)(3)(4)(5)(6)(7)(8)(9)(1

3、0)(11)(12)(13)(14)(15)(15)OPERATIONTEMPERATURE(2)PRODUCTFAMILY2:FlashC:Commercial(0℃~70℃)E:Extended(-25℃~85℃)M:Mobile(-30℃~85℃)I(3)PRODUCTMODE7:NANDFlashB:Industrial(-40℃~85℃)(14)BADBLOCK:IncludedBadBlock(4)POWERSUPPLY(VCC)U:2.7V~3.6VS:1~5BadBloc

4、kIncludedP:AllGoodBlockLS:2.7V:1.8V(13)-d“-”(5),(6)DENSITY64:64Mb12:128Mb(12)PACKAGEMATERIAL25:256Mb1G:1Gb4G:4GbAG:16GbCG:64Gb51:512Mb2G:2Gb8G:8GbBG:32GbDG:128GbAPLR:Wafer:LeadFree:Leaded:Lead&HalogenFree(11)PACKAGETYPE(7)ORGANIZATION8:x86:x16(

5、8)NANDCLASSIFICATIONS:SLC+SingleDie+SmallBlockA:SLC+DoubleDie+SmallBlockB:SLC+QuadrupleDie+SmallBlockTVSNFXMYUW:TSOP1:WSOP:USOP:LSOP1:FBGA:LGA:WLGA:VLGA:ULGA:WaferFGHJ:SLC+SingleDie+LargeBlock:SLC+DoubleDie+LargeBlock:SLC+QuadrupleDie+LargeBlock:SLC

6、+ODP+LargeBlockCKD:PGD1(chip):KGD:PGD2KTUVWY:SLC+DSP+LargeBlock:MLC+SingleDie+LargeBlock:MLC+DoubleDie+LargeBlock:MLC+QuadrupleDie+LargeBlock:MLC+DSP+LargeBlock:MLC+ODP+LargeBlock(10)DIEGENERATIONM:1stA:2ndB:3rdC:4th(9)FUNCTIONMODE1:1nCE&1R/nB;Sequ

7、entialRowReadEnable2:1nCE&1R/nB;SequentialRowReadDisable4:2nCE&2R/nB;SequentialRowReadEnable5:2nCE&2R/nB;SequentialRowReadDisableD:DualInterface;SequentialRowReadDisableF:4nCE&4R/nB;SequentialRowReadDisable‘HY’PartNumberLastUpdated:Dec.2007NANDFlashPAR

8、TNUMBERINGHYXXXXXXXXXX-X(X)(X)(X)(X)(1)(1)HYNIXMEMORY(2)COMPONENTGROUP27:NANDFlash(3)POWERSUPPLY(VCC)(2)(3)(4)(5)(6)(7)(8)(9)(10)(11)(12)(13)(13)OPTION(CUSTOMER)CustomerInitialOption(12)BADBLOCKU:2.7V~3.6VBlank:WaferB:IncludedBad