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1、今天找三星闪存资料,发现了他的命名规则,发上来与大家分享下.三星的purenandflash（就是不带其他模块只是nandflash存储芯片）的命名规则如下：1.Memory(K)2.NANDFlash:93.SmallClassification(SLC:SingleLevelCell,MLC:MultiLevelCell,SM:SmartMedia,S/B:SmallBlock)1:SLC1ChipXDCard2:SLC2ChipXDCard4:SLC4ChipXDCardA:SLC+MuxedI/FChipB:MuxedI/FChipD:SLCDualSME:SLCDUAL(
2、S/B)F:SLCNormalG:MLCNormalH:MLCQDPJ:Non-MuxedOneNandK:SLCDieStackL:MLCDDPM:MLCDSPN:SLCDSPQ:4CHIPSMR:SLC4DIESTACK(S/B)S:SLCSingleSMT:SLCSINGLE(S/B)U:2STACKMSPV:4STACKMSPW:SLC4DieStack4~5.Density（注：实际单位应该是bit，而不是Byte）12:512M16:16M28:128M32:32M40:4M56:256M64:64M80:8M1G:1G2G:2G4G:4G8G:8GAG:16GBG:3
3、2GCG:64GDG:128G00:NONE6~7.organization00:NONE08:x816:x168.VccA:1.65V~3.6VB:2.7V(2.5V~2.9V)C:5.0V(4.5V~5.5V)D:2.65V(2.4V~2.9V)E:2.3V~3.6VR:1.8V(1.65V~1.95V)Q:1.8V(1.7V~1.95V)T:2.4V~3.0VU:2.7V~3.6VV:3.3V(3.0V~3.6V)W:2.7V~5.5V,3.0V~5.5V0:NONE9.Mode0:Normal1:DualnCE&DualR/nB4:QuadnCE&SingleR/nB5:Q
4、uadnCE&QuadR/nB9:1stblockOTPA:MaskOption1L:Lowgrade10.GenerationM:1stGenerationA:2ndGenerationB:3rdGenerationC:4thGenerationD:5thGeneration11."─"12.PackageA:COBB:TBGAC:CHIPBIZD:63-TBGAE:TSOP1(Lead-Free,1217)F:WSOP(Lead-Free)G:FBGAH:TBGA(Lead-Free)I:ULGA(Lead-Free)J:FBGA(Lead-Free)K:TSOP1(1217)
5、L:LGAM:TLGAN:TLGA2P:TSOP1(Lead-Free)Q:TSOP2(Lead-Free)R:TSOP2-RS:SMARTMEDIAT:TSOP2U:COB(MMC)V:WSOPW:WAFERY:TSOP113.TempC:CommercialI:IndustrialS:SmartMediaB:SmartMediaBLUE0:NONE(ContainingWafer,CHIP,BIZ,Exceptionhandlingcode)3:WaferLevel314.BadBlockA:AppleBadBlockB:IncludeBadBlockD:DaisychainS
6、ampleK:SandiskBinL:1~5BadBlockN:ini.0blk,add.10blkS:AllGoodBlock0:NONE(ContainingWafer,CHIP,BIZ,Exceptionhandlingcode)15.NAND-Reserved0:Reserved16.PackingType-Commontoallproducts,exceptofMaskROM-DividedintoTAPE&REEL(InMaskROM,dividedintoTRAY,AMMOPackingSeparately)【举例说明】K9GAG08U0M-PCB0123456789
7、101112131415161718K9GAG08U0M详细信息如下:1.Memory(K)2.NANDFlash:93.SmallClassification(SLC:SingleLevelCell,MLC:MultiLevelCell,SM:SmartMedia,S/B:SmallBlock)G:MLCNormal4~5.DensityAG:16G(Note:这里单位是bit而不是byte，因此实际大小是16Gb=2GB)6.Technology0:Normal(
