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ID:14274288
大小:77.00 KB
页数:18页
时间:2018-07-27
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1、微电子中英文辞典Abruptjunction突变结Acceleratedtesting加速实验Acceptor受主Acceptoratom受主原子Accumulation积累、堆积Accumulatingcontact积累接触Accumulationregion积累区Accumulationlayer积累层Activeregion有源区Activecomponent有源元Activedevice有源器件Activation激活Activationenergy激活能Activeregion有源(放大)区Admittance导纳Allowedband允带Al
2、loy-junctiondevice合金结器件Aluminum(Aluminium)铝Aluminum–oxide铝氧化物Aluminumpassivation铝钝化Ambipolar双极的Ambienttemperature环境温度Amorphous无定形的,非晶体的Amplifier功放扩音器放大器Analogue(Analog)comparator模拟比较器Angstrom埃Anneal退火Anisotropic各向异性的Anode阳极`CS@S3、Arsenic(AS)砷xInW44、ess俄歇过程L(gmI"it9Avalanche雪崩wZ_h:=wAvalanchebreakdown雪崩击穿Avalancheexcitation雪崩激发Backgroundcarrier本底载流子Backgrounddoping本底掺杂Backward反向Backwardbias反向偏置Ballastingresistor整流电阻Ballbond球形键合Band能带,MM/Bandgap能带间隙Barrier势垒Barrierlayer势垒层Barrierwidth势垒宽度Base基极Basecontact基区接触Basestretchin5、g基区扩展效应G@go5'^OBasetransittime基区渡越时间<=RaWQBasetransportefficiency基区输运系数-h1JdE~Base-widthmodulation基区宽度调制/mZ`z&6、gBasisvector基矢*Cl5Y':7、hBias偏置Bilateralswitch双向开关Binarycode二进制代码Binarycompoundsemiconductor二元化合物半导体Bipolar双极性的BipolarJunctionTransistor(BJT)双极晶体管Bloch布洛赫Blockingb8、and阻挡能带3DY0Py,Blockingcontact阻挡接触rqxCjhDBody-centered体心立方!HL~=-b{pBody-centredcubicstructure体立心结构B9、ateglass硼硅玻璃Boundarycondition边界条件Boundelectron束缚电子Breadboard模拟板、实验板Breakdown击穿Breakover转折Brillouin布里渊FBrillouinzone布里渊区Built-in内建的Build-inelectricfield内建电场Bulk体/体内Bulkabsorption体吸收Bulkgeneration体产生Bulkrecombination体复合Burn-in老化Burnout烧毁Buriedchannel埋沟Burieddiffusionregion隐埋扩散区Can外10、壳Capacitance电容Capturecrosssection俘获截面Capturecarrier俘获载流子Carrier载流子、载波Carrybit进位位Carry-inbit进位输入Carry-outbit进位输出Cascade级联Case管壳Cathode阴极Center中心Ceramic陶瓷(的)Channel沟道Channelbreakdown沟道击穿Channelcurrent沟道电流Channeldoping沟道掺杂Channelshortening沟道缩短Channelwidth沟道宽度Characteristicimpedance特11、征阻抗Charge电荷、充电Charge-compensationeffects
3、Arsenic(AS)砷xInW44、ess俄歇过程L(gmI"it9Avalanche雪崩wZ_h:=wAvalanchebreakdown雪崩击穿Avalancheexcitation雪崩激发Backgroundcarrier本底载流子Backgrounddoping本底掺杂Backward反向Backwardbias反向偏置Ballastingresistor整流电阻Ballbond球形键合Band能带,MM/Bandgap能带间隙Barrier势垒Barrierlayer势垒层Barrierwidth势垒宽度Base基极Basecontact基区接触Basestretchin5、g基区扩展效应G@go5'^OBasetransittime基区渡越时间<=RaWQBasetransportefficiency基区输运系数-h1JdE~Base-widthmodulation基区宽度调制/mZ`z&6、gBasisvector基矢*Cl5Y':7、hBias偏置Bilateralswitch双向开关Binarycode二进制代码Binarycompoundsemiconductor二元化合物半导体Bipolar双极性的BipolarJunctionTransistor(BJT)双极晶体管Bloch布洛赫Blockingb8、and阻挡能带3DY0Py,Blockingcontact阻挡接触rqxCjhDBody-centered体心立方!HL~=-b{pBody-centredcubicstructure体立心结构B9、ateglass硼硅玻璃Boundarycondition边界条件Boundelectron束缚电子Breadboard模拟板、实验板Breakdown击穿Breakover转折Brillouin布里渊FBrillouinzone布里渊区Built-in内建的Build-inelectricfield内建电场Bulk体/体内Bulkabsorption体吸收Bulkgeneration体产生Bulkrecombination体复合Burn-in老化Burnout烧毁Buriedchannel埋沟Burieddiffusionregion隐埋扩散区Can外10、壳Capacitance电容Capturecrosssection俘获截面Capturecarrier俘获载流子Carrier载流子、载波Carrybit进位位Carry-inbit进位输入Carry-outbit进位输出Cascade级联Case管壳Cathode阴极Center中心Ceramic陶瓷(的)Channel沟道Channelbreakdown沟道击穿Channelcurrent沟道电流Channeldoping沟道掺杂Channelshortening沟道缩短Channelwidth沟道宽度Characteristicimpedance特11、征阻抗Charge电荷、充电Charge-compensationeffects
4、ess俄歇过程L(gmI"it9Avalanche雪崩wZ_h:=wAvalanchebreakdown雪崩击穿Avalancheexcitation雪崩激发Backgroundcarrier本底载流子Backgrounddoping本底掺杂Backward反向Backwardbias反向偏置Ballastingresistor整流电阻Ballbond球形键合Band能带,MM/Bandgap能带间隙Barrier势垒Barrierlayer势垒层Barrierwidth势垒宽度Base基极Basecontact基区接触Basestretchin
5、g基区扩展效应G@go5'^OBasetransittime基区渡越时间<=RaWQBasetransportefficiency基区输运系数-h1JdE~Base-widthmodulation基区宽度调制/mZ`z&
6、gBasisvector基矢*Cl5Y':
7、hBias偏置Bilateralswitch双向开关Binarycode二进制代码Binarycompoundsemiconductor二元化合物半导体Bipolar双极性的BipolarJunctionTransistor(BJT)双极晶体管Bloch布洛赫Blockingb
8、and阻挡能带3DY0Py,Blockingcontact阻挡接触rqxCjhDBody-centered体心立方!HL~=-b{pBody-centredcubicstructure体立心结构B9、ateglass硼硅玻璃Boundarycondition边界条件Boundelectron束缚电子Breadboard模拟板、实验板Breakdown击穿Breakover转折Brillouin布里渊FBrillouinzone布里渊区Built-in内建的Build-inelectricfield内建电场Bulk体/体内Bulkabsorption体吸收Bulkgeneration体产生Bulkrecombination体复合Burn-in老化Burnout烧毁Buriedchannel埋沟Burieddiffusionregion隐埋扩散区Can外10、壳Capacitance电容Capturecrosssection俘获截面Capturecarrier俘获载流子Carrier载流子、载波Carrybit进位位Carry-inbit进位输入Carry-outbit进位输出Cascade级联Case管壳Cathode阴极Center中心Ceramic陶瓷(的)Channel沟道Channelbreakdown沟道击穿Channelcurrent沟道电流Channeldoping沟道掺杂Channelshortening沟道缩短Channelwidth沟道宽度Characteristicimpedance特11、征阻抗Charge电荷、充电Charge-compensationeffects
9、ateglass硼硅玻璃Boundarycondition边界条件Boundelectron束缚电子Breadboard模拟板、实验板Breakdown击穿Breakover转折Brillouin布里渊FBrillouinzone布里渊区Built-in内建的Build-inelectricfield内建电场Bulk体/体内Bulkabsorption体吸收Bulkgeneration体产生Bulkrecombination体复合Burn-in老化Burnout烧毁Buriedchannel埋沟Burieddiffusionregion隐埋扩散区Can外
10、壳Capacitance电容Capturecrosssection俘获截面Capturecarrier俘获载流子Carrier载流子、载波Carrybit进位位Carry-inbit进位输入Carry-outbit进位输出Cascade级联Case管壳Cathode阴极Center中心Ceramic陶瓷(的)Channel沟道Channelbreakdown沟道击穿Channelcurrent沟道电流Channeldoping沟道掺杂Channelshortening沟道缩短Channelwidth沟道宽度Characteristicimpedance特
11、征阻抗Charge电荷、充电Charge-compensationeffects
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