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1、摘要摘要GaN半导体材料具有禁带宽度大、电子饱和速度高、导热性能好等优点,在高温、大功率、微波器件领域拥有很大的发展潜力。其中,AlGaN/GaNHEMT作为GaN基微电子器件代表,可广泛利用与航天等领域。由于器件长时间工作在高偏压和高空间辐射的环境下,器件的可靠性是一件值得科学家们关注的问题,本论文主要是探讨新型的AlGaN/GaNHEMT器件。首先,介绍AlGaN/GaNHEMT器件的研究现状以及发展潜力。其次,介绍了AlGaN/GaNHEMT器件的性能参数、工作原理,介绍了仿真软件TCADsilvaco的物
2、理模型。最后,使用silvaco仿真软件自定义一个AlGaN/GaNHEMT器件,再对其进行栅电流与温度特性的仿真、势垒层厚度与栅电流特性的仿真、漏电流与温度的特性仿真、漏电流与势垒层厚度的特性仿真,仿真结束之后,又通过Origin数据处理软件进行数据处理,得出特性曲线,并通过分析特性曲线得出器件的特性,最后我们展望如何得性能更好的AlGaN/GaN器件结构。关键字:AlGaN/GaNHEMTsilvaco温度栅泄漏电流摘要AbstractGaNsemiconductormaterialhavingalargeb
3、andgap,highelectronsaturationvelocity,goodthermalconductivity,etc.,havegreatpotentialinhigh-temperature,high-powermicrowavedevicesinthefield.And,AlGaN/GaNHEMTGaN-basedmicroelectronicdevicesasrepresentativesofotherwidelyavailableandaerospaceuse.Becausethedevic
4、etoworklonghoursunderhighbiasandhighspaceradiationenvironment,thenthedevicereliabilityisaproblemworthyofconcerntoscientists,themainthesisistoexplorethenewAlGaN/GaNHEMT.Firstly,researchstatusAlGaN/GaNHEMTdevicesanddevelopmentpotential.Secondly,theintroductiono
5、ftheAlGaN/GaNHEMTdeviceperformanceparameters,workingprinciple,introducedsimulationsoftwareTCADsilvacophysicalmodel.Finally,theuseofacustomsimulationsoftwaresilvacoAlGaN/GaNHEMTdevices,thenitsgatecurrentandtemperaturecharacteristicsofthesimulation,thesimulatio
6、nofthebarrierlayerthicknessandgatecurrentcharacteristicsoftheleakagecurrentversustemperaturecharacteristicsimulation,leakagecurrentandpotentialcharacteristicsofthebarrierlayerthicknesssimulation,aftertheendofthesimulation,dataprocessinganddataprocessingsoftwa
7、rebyOrigin,derivedcharacteristiccurvescharacteristiccurvesderivedbyanalyzingthecharacteristicsofthedevice,andfinallywehaveabetteroutlookonhowtheperformanceofAlGaN/GaNdevicesstructure.Keywords:AlGaN/GaNHEMTSilVacoTemperatureGateleakage[7]张飞,王林,陈晓.独立董事研究[J].现代商
8、业,2007(10):61-63.(多个作者之间用逗号)i目录第一章绪论11.1AlGaN/GaNHEMT的研究背景11.1.1GaN用于微波功率器件的优势11.1.2AlGaN/GaNHEMT的研究发展21.1.3GaN器件的优点31.2GaNHEMT研究成果51.3论文的主要内容与工作安排7第二章HEMT器件的基本理论92.1AlGaN/GaN异质结材料2DEG形成9