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1、April25,2006KENTSTATEUNIVERSITYCOLLEGEOFTECHNOLOGYTECH65800:BURN-IN/STRESSTESTINGFORRELIABILITYINSTRUCTOR:DR.RAJCHOWDHURYResearchPaperBURN-IN,RELIABILITYTESTING,ANDMANUFACTURINGOFSEMICONDUCTORSPreparedby:CagatayBozturkSPRING20065BURN-IN,RELIABILITYTESTING,ANDMANUFACTURINGOFSEMICONDUCTORSCagatay
2、Bozturk5Abstract¾InthispaperIpresentthemanufacturingstageofsemiconductorsandreliabilityofsemiconductors.FailureStageintervalswereexamined,regardingtographofFailureRate&Time.EffectsofBurn-inStressTestonsemiconductorswereinspected.Methodologieswereexaminedforqualificationsofsemiconductors.INTRODU
3、CTIONBurn-Inistheapplicationofthermalandelectricalstressforthepurposesofinducingthefailureof"marginal(microelectronic)devices,thosewithinherentdefectsordefectsresultingfrommanufacturingaberrationswhichcausetimeandstressdependantfailures.Themanufacturingofsemiconductorproductsconsistsoffourdisti
4、nctstages:waferfabrication,wafersortandtest,packagingandassembly,andfunctional(electrical)tests.Thesefourstagescanbedividedintotwocategories.Waferfabricationandwafersortandtestarereferredtoasfront-endmanufacturingoperations.Packaging,assembly,andfunctionaltestingarereferredtoasbackendmanufactur
5、ingoperations.RELIABILITYOFSEMICONDUCTORSToevaluatethereliabilityofanelectronicsystem,reliabilityinformationonthecomponentsusedinthatsystemisimportant.Failureratesareoftenusedasanindexforreliability.Afailurerateindicateshowoftenafailureoccursperunittime,andfailure-ratevaluesgenerallychangeovert
6、imeasshownbelowEarlyfailurestage:Duringthisstage,failuresoccuratahighratefollowingtheinitialoperationofsemiconductordevices.Theyoccurverysoonandthusthefailureratedeclinesrapidlyovertime.ThisIsbecausethepotential'failuresthatcouldnotberemovedthroughaselectiveprocessareincludedandsurfaceinashortt
7、imeifastresssuchastemperatureorvoltageisappliedafteruseofthedeviceisstarted.Inthecaseofsemiconductors,thesefailuresareusuallyduetodefectsthatcouldnotberemovedduringproduction,suchanmicrodustcollectingonthewafer,ortomaterialdefects
