08数控(1)班邓文发、汉能专业英语作业

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1、5.39AsiliconpnjunciondiodeatT=300Kisforwadbiased.Thereverde-saturationcurrentisIs=10-14A.Determinetherequireddiodevoltagetoinduceadiodecurrentof(a)Id=100uAand(b)Id=1.50mA.5.40Thereverse-saturationcurrentofaGaAspnjunctiondiodeisIs=5x10-21A.AssumeT=300k.Determinetheforward-biodecurrentfo

2、rVD=0.90V,(b)VD=1.0V,and(c)VD=1.10V.5.41Theforward-biasscrrentinaGaAspnjunctionatT=300kisId=15Am.Thereverse-saturationcurrentisIs=10-19A.Determinethereqiredforward-biasdiodevoltage.5.42ASchottkydiodeandapnjunctiondiodehavecross-sectionalareasofA=5x10-4cm2.Thereversesaturationcurrentden

3、sityoftheSchottjydiodeis3x10-8A/cm2andthereversesaturationcurrentdensityofthepnjunctiondiodeis3x10-12A/cm2.Thetempwratureos300k,Determinetheforward-biasvoltageineachdioderequoredtoyielddiodecurrentsof1mA.5.43ThereversesaturationcurrentdensitiesinapnjunctiondiodeandaSchottjydiodeare5x10

4、-12A/cm2and7x10-8A/cm2,respectively,atT=300k.Thecross-sectionalareaofthepnjunctoondiodeisA=8x10-4cm2.Detrminethecross-sectionalareaofthepnjunctiondiodesothatthedofferenceinforward-biasvoltagestoachieve1.2mAis0.265V.5.39Thereverse-saturationcurrentsofaSchottjydiodeandapnjunctiondiodeatT

5、=300kare5x10-8Aand10-12A,respectively.Thediodesareonnevtedinparallelandaredrovenbyaconstantcuttentof0.5mA.Deter,inethecurrentinrachdoode.Determinethevoltageacrosseachdiode.Repeatpartofthediodesareconnectedinseries.Sevtion5.6Metal-SemiconductorOhmocConracts5.40Ametal,withaworjfunction=4

6、.2V,isdepositedonann-typesiliconsemicon-ductorwith=4.0BandE=1.12eV.Assumenointerfacestatesexidtatthejunction.LetT=300k.Sketchtheenergy-bandduagramfotzerobiasforthecadewhrnnospacechargeregionexestsatthejunction.SetermineNdsothattheconditiioninpoartissatisfies.Whaatisthepotejeialbarrierh

7、eightseenbyelectronsinthemetalmovingintothesemiconductor?5.41Considertheenergy-banddiagramofasiliconSchottjyjunctionunderzerobiasshowninFigureP5.46.Let=0.7VandT=300k,Determinethedopingrequiressothat=50Aatthepointwherethepotentialis2belowthepeakvalue,5.42Ametal-semiconductorjunctionis