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1、Chapter2BasicVLSI/ULSIFabricationProcessTechnologyOutlineEvolutionofICProcessTechnologyMainLSI/VLSIprocessesdevelopedinhistoryCMOScorebasedULSItechnology---basisofpresentMicroelectronicsMainelementaldevicesandprocessflowofICfabricationMajorchipfabrica
2、tionmaterialandtechnologyUltracleantechnologies-ofvitalimportanceforVLSI/ULSImanufacturingI.EvolutionofICProcessTechnologyICcircuitryevolutiondeterminedbyprocessprogressBipolarprocess:RTL,DTL,TTL,STTL,LSTTL,ECL,I2L…..MOSProcess:PMOS,NMOS,CMOSJFET,MESF
3、ETProcesstechnology-MostactivefactorinICprogressPNjunctionformedbygrowthdopingormetal/Ge(Si)alloydopingin1950s*GrowthdopingNPNTransistor*AlloydopingPNPTrasistorPNjunctionformedbyblanketdiffusiondopingin1950sTransistorformedbyplanarprocessbasedondiffus
4、ion,oxidationandlithographinlate1950s*Doublediffusedmesatransistorprocess*TransistorbyplanarprocessTransistorandothercircuitelementsformedbyplanartechnologyOn-chipresistor:bydiffusion;poly-SibydepositionOn-chipcapacitor:metal/I/Si;M/I/M;Poly-Si/I/Poly
5、-Si(I-SiO2orotherdielectricfilm)On-chipinductor:spiralmetallinewithgroundshieldII.MainLSI/VLSIprocessesdevelopedinhistoryMainLSI/VLSI/ULSIrequirementsHighintegrationdensityHighspeedHighreliabilityLowpowerPMOSEarlyLSI/VLSIproducts:calculators,electroni
6、cgame,...LowspeedNMOSHigherspeedthanPMOSMainVLSIprocessin80’sforDRAM,microprocessorsStandardbipolar(LSTTL,ECL…)HighdrivingcapabilityAppliedforhigh-speeddevices:Earlyhigh-speedcomputer,communicationsystem,…Lowerintegrationdensityandhigherpowerconsumpti
7、onI2LbipolarLowerpower&higherintegrationthanstandardbipolarLowerspeedCMOSLowestpowerconsumptionthanallothersNoiseresistanceandhigherreliabilityMainstreamofVLSI/ULSIprocesssincelate80’sBiCMOSCombinationofhighspeedandlowpowerHighprocesscomplexityGaAsMES
8、FETICHigh-speeddevicesforcommunication,etc.PossibilityofintegrationwithphotonicdevicesIII.CMOScorebasedULSItechnology-basisofpresentmicroelectronicsLowpowerconsumptionEssentialrequirementforULSI/SoCchipCMOSbasedSiprocessDominantULSItechnolog